Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices

Somnath Mondal; Jim Long Her; Fa Hsyang Chen; Shao Ju Shih; Tung Ming Pan

doi:10.1109/LED.2012.2196672

Improved resistance switching characteristics in Ti-Doped Yb ₂O ₃ for resistive nonvolatile memory devices

Somnath Mondal^*
, Jim Long Her
, Fa Hsyang Chen
, Shao Ju Shih
, Tung Ming Pan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

26 Scopus citations

Abstract

A conventional approach of doping to control the bistable resistance switching in Yb ₂O ₃ was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb ₂O ₃ to Schottky type in YbTiO _x. The program/erase cycles with successive readout operation over 10 ⁵ cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO _xTaN memory is a promising candidate to be integrated into future memory processes.

Original language	English
Article number	6203359
Pages (from-to)	1069-1071
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2196672
State	Published - 2012

Keywords

Doping
Ni
TaN
Yb O
YbTiO
resistive random access memory (ReRAM)

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10.1109/LED.2012.2196672

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title = "Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices",

abstract = "A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.",

keywords = "Doping, Ni, TaN, Yb O, YbTiO, resistive random access memory (ReRAM)",

author = "Somnath Mondal and Her, \{Jim Long\} and Chen, \{Fa Hsyang\} and Shih, \{Shao Ju\} and Pan, \{Tung Ming\}",

year = "2012",

doi = "10.1109/LED.2012.2196672",

language = "英语",

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T1 - Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices

AU - Mondal, Somnath

AU - Her, Jim Long

AU - Chen, Fa Hsyang

AU - Shih, Shao Ju

AU - Pan, Tung Ming

PY - 2012

Y1 - 2012

N2 - A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.

AB - A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.

KW - Doping

KW - Ni

KW - TaN

KW - Yb O

KW - YbTiO

KW - resistive random access memory (ReRAM)

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U2 - 10.1109/LED.2012.2196672

DO - 10.1109/LED.2012.2196672

M3 - 文章

AN - SCOPUS:84862841603

SN - 0741-3106

VL - 33

SP - 1069

EP - 1071

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6203359

ER -

Improved resistance switching characteristics in Ti-Doped Yb ₂O ₃ for resistive nonvolatile memory devices

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Keywords

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