Improved resistive switching memory characteristics using core-shell IrO x nano-dots in Al 2O 3WO x bilayer structure

W. Banerjee*, S. Maikap, S. Z. Rahaman, A. Prakash, T. C. Tien, W. C. Li, J. R. Yang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

37 Scopus citations

Abstract

Improved resistive switching memory characteristics in an IrO xAl 2O 3IrO x-NDAl 2O 3WO xW structure are investigated in this study. Core-shell iridium-oxide (IrO x) nano-dots (NDs) with a small diameter (∼2 nm) and high-density (0.7 × 10 13cm 2+) are observed by high-resolution transmission electron microscopy (HRTEM). The IrO x-NDs, Al 2O 3, and WO x layers are also confirmed by both HRTEM and X-ray photo-electron spectroscopy (XPS) analyses. Large number of electrons (with density of 8.9 × 10 18cm 3+) in the core-region and holes (with density of 7.1 × 10 18cm 3+) in the shell-region can be trapped in the IrO x-NDs under a small sweeping gate voltage of 5 V. The IrO x-NDs in an Al 2O 3WO x bilayer structure have an excellent uniformity of the SET and RESET voltages, an applicable ratio of highlow resistance state (>50), a long read endurance of 10 5 times and an extrapolated 10 years data retention at 85C. Owing to the high charge-trapping density and nano-filament formation through the small size of the core-shell IrO x-NDs, the improvement of resistive switching performance is evident in comparison to that of the pure Al 2O 3 film in an IrO xAl 2O 3WO xW structure. This study is not only important for improving the performance of IrO x-ND ReRAM devices but also helpful for designing a low power nanoscale nonvolatile memory in future.

Original languageEnglish
Pages (from-to)H177-H182
JournalJournal of the Electrochemical Society
Volume159
Issue number2
DOIs
StatePublished - 2012

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