Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes

S. Z. Rahaman; S. Maikap

doi:10.1109/IMW.2010.5488314

Improved resistive switching memory characteristics using novel bi-layered Ge_0.2Se_0.8/Ta₂O₅ solid-electrolytes

S. Z. Rahaman, S. Maikap^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge_0.2Se_0.8/Ta₂O₅/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge_0.2Se_0.8 solid-electrolyte. Stable endurance of >3.5×10⁵ cycles and excellent retention characteristics with a low compliance current of 100 nA are obtained at 85 ^oC. The high resistance state (R_High) increases with decreasing the device size from 8 μm to 0.2 μm. The low resistance state (R_Low) is independent with different via diameters. The R _Low decreases with increasing the compliance currents from 1nA to 1mA, which can be useful for future nanoscale low power consuming nonvolatile memory device applications.

Original language	English
Title of host publication	2010 IEEE International Memory Workshop, IMW 2010
DOIs	https://doi.org/10.1109/IMW.2010.5488314
State	Published - 2010
Event	2010 IEEE International Memory Workshop, IMW 2010 - Seoul, Korea, Republic of Duration: 16 05 2010 → 19 05 2010

Publication series

Name	2010 IEEE International Memory Workshop, IMW 2010

Conference

Conference	2010 IEEE International Memory Workshop, IMW 2010
Country/Territory	Korea, Republic of
City	Seoul
Period	16/05/10 → 19/05/10

Keywords

Bi-layered solid-electrolyte
GeSe
High-κ TaO Cu filament
Nanoscale memory
Resistive switching

Access to Document

10.1109/IMW.2010.5488314

Cite this

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title = "Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes",

abstract = "Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of >3.5×105 cycles and excellent retention characteristics with a low compliance current of 100 nA are obtained at 85 oC. The high resistance state (RHigh) increases with decreasing the device size from 8 μm to 0.2 μm. The low resistance state (RLow) is independent with different via diameters. The R Low decreases with increasing the compliance currents from 1nA to 1mA, which can be useful for future nanoscale low power consuming nonvolatile memory device applications.",

keywords = "Bi-layered solid-electrolyte, GeSe, High-κ TaO Cu filament, Nanoscale memory, Resistive switching",

author = "Rahaman, {S. Z.} and S. Maikap",

year = "2010",

doi = "10.1109/IMW.2010.5488314",

language = "英语",

isbn = "9781424467211",

series = "2010 IEEE International Memory Workshop, IMW 2010",

booktitle = "2010 IEEE International Memory Workshop, IMW 2010",

note = "2010 IEEE International Memory Workshop, IMW 2010 ; Conference date: 16-05-2010 Through 19-05-2010",

}

Rahaman, SZ & Maikap, S 2010, Improved resistive switching memory characteristics using novel bi-layered Ge_0.2Se_0.8/Ta₂O₅ solid-electrolytes. in 2010 IEEE International Memory Workshop, IMW 2010., 5488314, 2010 IEEE International Memory Workshop, IMW 2010, 2010 IEEE International Memory Workshop, IMW 2010, Seoul, Korea, Republic of, 16/05/10. https://doi.org/10.1109/IMW.2010.5488314

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AU - Maikap, S.

PY - 2010

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N2 - Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of >3.5×105 cycles and excellent retention characteristics with a low compliance current of 100 nA are obtained at 85 oC. The high resistance state (RHigh) increases with decreasing the device size from 8 μm to 0.2 μm. The low resistance state (RLow) is independent with different via diameters. The R Low decreases with increasing the compliance currents from 1nA to 1mA, which can be useful for future nanoscale low power consuming nonvolatile memory device applications.

AB - Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of >3.5×105 cycles and excellent retention characteristics with a low compliance current of 100 nA are obtained at 85 oC. The high resistance state (RHigh) increases with decreasing the device size from 8 μm to 0.2 μm. The low resistance state (RLow) is independent with different via diameters. The R Low decreases with increasing the compliance currents from 1nA to 1mA, which can be useful for future nanoscale low power consuming nonvolatile memory device applications.

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