Improved resistive switching memory performance using novel W/TaO x/TiOxN/TiN structure

A. Prakash, S. Maikap*, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, M. J. Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Improved resistive switching memory characteristics in a novel W/TaO x/TiOxN/TiN device with a small current compliance of 50 μA have been investigated. Memory device has shown consecutive repeatable resistive switching cycles (>102) with small operation voltage of ±1.5V. The device with TaOx/TiOxN shows improved resistance ratio of ∼40 as compared to TiOxN device (∼7). The switching mechanism is attributed to the formation/dissolution of O xygen vacancy filament. The memory device has shown good read endurance of >7.5×105 cycles and excellent data retention of >5 hours at 85°C.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
StatePublished - 2013
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
Duration: 22 04 201324 04 2013

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/TerritoryTaiwan
CityHsinchu
Period22/04/1324/04/13

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