@inproceedings{d05a601d0bc54d5885ee9158563eb938,
title = "Improved resistive switching memory performance using novel W/TaO x/TiOxN/TiN structure",
abstract = "Improved resistive switching memory characteristics in a novel W/TaO x/TiOxN/TiN device with a small current compliance of 50 μA have been investigated. Memory device has shown consecutive repeatable resistive switching cycles (>102) with small operation voltage of ±1.5V. The device with TaOx/TiOxN shows improved resistance ratio of ∼40 as compared to TiOxN device (∼7). The switching mechanism is attributed to the formation/dissolution of O xygen vacancy filament. The memory device has shown good read endurance of >7.5×105 cycles and excellent data retention of >5 hours at 85°C.",
author = "A. Prakash and S. Maikap and Chen, {W. S.} and Lee, {H. Y.} and Chen, {F. T.} and Kao, {M. J.} and Tsai, {M. J.}",
year = "2013",
doi = "10.1109/VLSI-TSA.2013.6545583",
language = "英语",
isbn = "9781467330817",
series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",
}