Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

T. Chang; H. L. Kao; S. P. McAlister; K. Y. Horng; Albert Chin

doi:10.1109/LED.2008.2007509

Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

T. Chang^*, H. L. Kao, S. P. McAlister, K. Y. Horng, Albert Chin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

Original language	English
Pages (from-to)	1402-1404
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2007509
State	Published - 2008

Keywords

Asymmetric
Lightly doped-drain (LDD)
MOS

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10.1109/LED.2008.2007509

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title = "Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design",

abstract = "We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.",

keywords = "Asymmetric, Lightly doped-drain (LDD), MOS",

author = "T. Chang and Kao, {H. L.} and McAlister, {S. P.} and Horng, {K. Y.} and Albert Chin",

year = "2008",

doi = "10.1109/LED.2008.2007509",

language = "英语",

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journal = "IEEE Electron Device Letters",

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AU - Chang, T.

AU - Kao, H. L.

AU - McAlister, S. P.

AU - Horng, K. Y.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

AB - We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

KW - Asymmetric

KW - Lightly doped-drain (LDD)

KW - MOS

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U2 - 10.1109/LED.2008.2007509

DO - 10.1109/LED.2008.2007509

M3 - 文章

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SN - 0741-3106

VL - 29

SP - 1402

EP - 1404

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

Abstract

Keywords

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