Improved schottky leakage current of in0.5Al0.5As/ In0.5Ga0.5As metamorphic HEMTs using (NH4) 2Sx treatment

Hsien Chin Chiu; Liann Be Chang; Yuan Chang Huang; Chung Wen Chen; Yu Jen Li; Yi Jen Chan

doi:10.1149/1.2256984

Improved schottky leakage current of in_0.5Al_0.5As/ In_0.5Ga_0.5As metamorphic HEMTs using (NH₄) ₂S_x treatment

Hsien Chin Chiu^*
, Liann Be Chang
, Yuan Chang Huang
, Chung Wen Chen
, Yu Jen Li
, Yi Jen Chan

^*Corresponding author for this work

The Electrochemical Society
Chang Gung University
National Central University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Surface passivation process play an important role, especially in high-power In_0.5Al_0.5As/ln_0.5Ga_0.5As metamorphic high-electron-mobility transistor (MHEMT) applications, and a passivation pretreatment technology has been proposed in this study. Before the deposition of SiN_x, passivation layers, submicrometer MHEMTs were subjected in (NH₄)₂S_x solution with UV-light illumination instead of hot (NH₄)₂S_x solution. The Schottky gate turn-on voltage was improved from 0.41 to 0.52 V after (NH₄)₂S_x + UV-light treatment due to the reduction of surface leakage current. Besides, the surface state density was also enhanced by this process, resulting in a higher current density and a higher input power swing range. The passivated 0.2 μm long gate MHEMTs with (NH₄)₂S_x pretreatment exhibited a minimum noise figure (NF_min) of 0.46 dB and an associated gain of 18 dB at 5 GHz operation.

Original language	English
Pages (from-to)	G309-G311
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	10
DOIs	https://doi.org/10.1149/1.2256984
State	Published - 2006

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@article{93e1cc62586d41b0adc9d4f358f3562d,

title = "Improved schottky leakage current of in0.5Al0.5As/ In0.5Ga0.5As metamorphic HEMTs using (NH4) 2Sx treatment",

abstract = "Surface passivation process play an important role, especially in high-power In0.5Al0.5As/ln0.5Ga0.5As metamorphic high-electron-mobility transistor (MHEMT) applications, and a passivation pretreatment technology has been proposed in this study. Before the deposition of SiNx, passivation layers, submicrometer MHEMTs were subjected in (NH4)2Sx solution with UV-light illumination instead of hot (NH4)2Sx solution. The Schottky gate turn-on voltage was improved from 0.41 to 0.52 V after (NH4)2Sx + UV-light treatment due to the reduction of surface leakage current. Besides, the surface state density was also enhanced by this process, resulting in a higher current density and a higher input power swing range. The passivated 0.2 μm long gate MHEMTs with (NH4)2Sx pretreatment exhibited a minimum noise figure (NFmin) of 0.46 dB and an associated gain of 18 dB at 5 GHz operation.",

author = "Chiu, \{Hsien Chin\} and Chang, \{Liann Be\} and Huang, \{Yuan Chang\} and Chen, \{Chung Wen\} and Li, \{Yu Jen\} and Chan, \{Yi Jen\}",

year = "2006",

doi = "10.1149/1.2256984",

language = "英语",

volume = "9",

pages = "G309--G311",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

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T1 - Improved schottky leakage current of in0.5Al0.5As/ In0.5Ga0.5As metamorphic HEMTs using (NH4) 2Sx treatment

AU - Chiu, Hsien Chin

AU - Chang, Liann Be

AU - Huang, Yuan Chang

AU - Chen, Chung Wen

AU - Li, Yu Jen

AU - Chan, Yi Jen

PY - 2006

Y1 - 2006

N2 - Surface passivation process play an important role, especially in high-power In0.5Al0.5As/ln0.5Ga0.5As metamorphic high-electron-mobility transistor (MHEMT) applications, and a passivation pretreatment technology has been proposed in this study. Before the deposition of SiNx, passivation layers, submicrometer MHEMTs were subjected in (NH4)2Sx solution with UV-light illumination instead of hot (NH4)2Sx solution. The Schottky gate turn-on voltage was improved from 0.41 to 0.52 V after (NH4)2Sx + UV-light treatment due to the reduction of surface leakage current. Besides, the surface state density was also enhanced by this process, resulting in a higher current density and a higher input power swing range. The passivated 0.2 μm long gate MHEMTs with (NH4)2Sx pretreatment exhibited a minimum noise figure (NFmin) of 0.46 dB and an associated gain of 18 dB at 5 GHz operation.

AB - Surface passivation process play an important role, especially in high-power In0.5Al0.5As/ln0.5Ga0.5As metamorphic high-electron-mobility transistor (MHEMT) applications, and a passivation pretreatment technology has been proposed in this study. Before the deposition of SiNx, passivation layers, submicrometer MHEMTs were subjected in (NH4)2Sx solution with UV-light illumination instead of hot (NH4)2Sx solution. The Schottky gate turn-on voltage was improved from 0.41 to 0.52 V after (NH4)2Sx + UV-light treatment due to the reduction of surface leakage current. Besides, the surface state density was also enhanced by this process, resulting in a higher current density and a higher input power swing range. The passivated 0.2 μm long gate MHEMTs with (NH4)2Sx pretreatment exhibited a minimum noise figure (NFmin) of 0.46 dB and an associated gain of 18 dB at 5 GHz operation.

UR - https://www.scopus.com/pages/publications/33747649272

U2 - 10.1149/1.2256984

DO - 10.1149/1.2256984

M3 - 文章

AN - SCOPUS:33747649272

SN - 1099-0062

VL - 9

SP - G309-G311

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Improved schottky leakage current of in_0.5Al_0.5As/ In_0.5Ga_0.5As metamorphic HEMTs using (NH₄) ₂S_x treatment

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