Abstract
AlGaN/GaN high electron mobility transistor (HEMT) was designed with improved surge protection characteristic through the use of a MSM-2DEG varactor connected in series to the gate of HEMT. Under an ESD surge stress of 1100 V or below, the HEMT incorporating this protection feature doesn't exhibit any change because the surge stress can be directly blocked by the MSM-2DEG varactor. Furthermore, flip-chip (FC) technology was also used to further improve the thermal performance and reliability of HEMTs. The heat generated in the two-dimensional electron gas (2DEG) channel of HEMT flows directly through the interconnect metal to the submount, and hence improve the thermal conduction. Based on these results, the proposed flip-chip HEMT with MSM-2DEG varactor can effectively improve the surge protection characteristics.
| Original language | English |
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| Title of host publication | EMC 2014/Tokyo - 2014 International Symposium on Electromagnetic CompatibiIity, Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 717-720 |
| Number of pages | 4 |
| ISBN (Electronic) | 9784885522871 |
| State | Published - 23 12 2014 |
| Event | 2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014 - Tokyo, Japan Duration: 12 05 2014 → 16 05 2014 |
Publication series
| Name | IEEE International Symposium on Electromagnetic Compatibility |
|---|---|
| Volume | 2014-December |
| ISSN (Print) | 1077-4076 |
| ISSN (Electronic) | 2158-1118 |
Conference
| Conference | 2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014 |
|---|---|
| Country/Territory | Japan |
| City | Tokyo |
| Period | 12/05/14 → 16/05/14 |
Bibliographical note
Publisher Copyright:© 2014 The Institute of Electronics, Information and Communication Engineer.
Keywords
- GaN
- flip-chip
- high electron mobility transistor (HEMT)
- surge protection
- varactor