Improved Switching Properties of Gadolinium Oxide ReRAM by CF4 Plasma Treatment

Yu-Ren Ye; Jer-Chyi Wang; Chao-Sung Lai

Improved Switching Properties of Gadolinium Oxide ReRAM by CF4 Plasma Treatment

Yu-Ren Ye, Jer-Chyi Wang, Chao-Sung Lai

Department of Electronic Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2011
Event	2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11) - Tokyo, Japan Duration: 20 01 2011 → 21 01 2011

Conference

Conference	2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11)
Period	20/01/11 → 21/01/11

Cite this

@conference{91581778735d4174a4007d15c5edf687,

title = "Improved Switching Properties of Gadolinium Oxide ReRAM by CF4 Plasma Treatment",

author = "Yu-Ren Ye and Jer-Chyi Wang and Chao-Sung Lai",

year = "2011",

language = "American English",

note = "2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11) ; Conference date: 20-01-2011 Through 21-01-2011",

}