Improvement in junction breakdown and GIDL using MFLA in DRAM product

Shian Jyh Lin; Chao Sung Lai; Sheng Tsung Chen; Yi Jung Chan; Ruey Dar Chang; Wei Chih Wang; Brady Huang; Neng Tai Shih; Graham Chuang; Chung Yuan Lee; Pei Ing Lee

doi:10.1149/1.3547701

Improvement in junction breakdown and GIDL using MFLA in DRAM product

Shian Jyh Lin^*, Chao Sung Lai, Sheng Tsung Chen, Yi Jung Chan, Ruey Dar Chang, Wei Chih Wang, Brady Huang, Neng Tai Shih, Graham Chuang, Chung Yuan Lee, Pei Ing Lee

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

In this study, we successfully improved junction breakdown using millisecond flash anneal (MFLA) on a dynamic random access memory (DRAM) product. By replacing a rapid thermal annealing (RTA) process with MFLA after contact implantation, improvements in NMOS and PMOS junctions were observed and no degradation was found. Device simulation data show that the PMOS junction electric field (E-field) was reduced with MFLA and that MFLA has an advantage in junction profile tailoring. The behavior of gate-induced drain leakage (GIDL) at different process stages with different annealing temperatures was studied. The preheat and peak temperatures of MFLA were found to be correlated with GIDL improvement. The optimum condition in this study was 1200C flash anneal with a 750C preheat temperature. Bright field and weak-beam dark-field transmission electron microscopy images showed perfect dislocation loops and fault dislocation loops remaining in the {113} plane with a size of around 17 20 nm in the junction area.

Original language	English
Pages (from-to)	H363-H369
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	4
DOIs	https://doi.org/10.1149/1.3547701
State	Published - 2011

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3547701

Cite this

@article{60e88743bdaa4d82a4378b67867daf8a,

title = "Improvement in junction breakdown and GIDL using MFLA in DRAM product",

abstract = "In this study, we successfully improved junction breakdown using millisecond flash anneal (MFLA) on a dynamic random access memory (DRAM) product. By replacing a rapid thermal annealing (RTA) process with MFLA after contact implantation, improvements in NMOS and PMOS junctions were observed and no degradation was found. Device simulation data show that the PMOS junction electric field (E-field) was reduced with MFLA and that MFLA has an advantage in junction profile tailoring. The behavior of gate-induced drain leakage (GIDL) at different process stages with different annealing temperatures was studied. The preheat and peak temperatures of MFLA were found to be correlated with GIDL improvement. The optimum condition in this study was 1200C flash anneal with a 750C preheat temperature. Bright field and weak-beam dark-field transmission electron microscopy images showed perfect dislocation loops and fault dislocation loops remaining in the {113} plane with a size of around 17 20 nm in the junction area.",

author = "Lin, {Shian Jyh} and Lai, {Chao Sung} and Chen, {Sheng Tsung} and Chan, {Yi Jung} and Chang, {Ruey Dar} and Wang, {Wei Chih} and Brady Huang and Shih, {Neng Tai} and Graham Chuang and Lee, {Chung Yuan} and Lee, {Pei Ing}",

year = "2011",

doi = "10.1149/1.3547701",

language = "英语",

volume = "158",

pages = "H363--H369",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Improvement in junction breakdown and GIDL using MFLA in DRAM product

AU - Lin, Shian Jyh

AU - Lai, Chao Sung

AU - Chen, Sheng Tsung

AU - Chan, Yi Jung

AU - Chang, Ruey Dar

AU - Wang, Wei Chih

AU - Huang, Brady

AU - Shih, Neng Tai

AU - Chuang, Graham

AU - Lee, Chung Yuan

AU - Lee, Pei Ing

PY - 2011

Y1 - 2011

N2 - In this study, we successfully improved junction breakdown using millisecond flash anneal (MFLA) on a dynamic random access memory (DRAM) product. By replacing a rapid thermal annealing (RTA) process with MFLA after contact implantation, improvements in NMOS and PMOS junctions were observed and no degradation was found. Device simulation data show that the PMOS junction electric field (E-field) was reduced with MFLA and that MFLA has an advantage in junction profile tailoring. The behavior of gate-induced drain leakage (GIDL) at different process stages with different annealing temperatures was studied. The preheat and peak temperatures of MFLA were found to be correlated with GIDL improvement. The optimum condition in this study was 1200C flash anneal with a 750C preheat temperature. Bright field and weak-beam dark-field transmission electron microscopy images showed perfect dislocation loops and fault dislocation loops remaining in the {113} plane with a size of around 17 20 nm in the junction area.

AB - In this study, we successfully improved junction breakdown using millisecond flash anneal (MFLA) on a dynamic random access memory (DRAM) product. By replacing a rapid thermal annealing (RTA) process with MFLA after contact implantation, improvements in NMOS and PMOS junctions were observed and no degradation was found. Device simulation data show that the PMOS junction electric field (E-field) was reduced with MFLA and that MFLA has an advantage in junction profile tailoring. The behavior of gate-induced drain leakage (GIDL) at different process stages with different annealing temperatures was studied. The preheat and peak temperatures of MFLA were found to be correlated with GIDL improvement. The optimum condition in this study was 1200C flash anneal with a 750C preheat temperature. Bright field and weak-beam dark-field transmission electron microscopy images showed perfect dislocation loops and fault dislocation loops remaining in the {113} plane with a size of around 17 20 nm in the junction area.

UR - http://www.scopus.com/inward/record.url?scp=79955139727&partnerID=8YFLogxK

U2 - 10.1149/1.3547701

DO - 10.1149/1.3547701

M3 - 文章

AN - SCOPUS:79955139727

SN - 0013-4651

VL - 158

SP - H363-H369

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 4

ER -

Improvement in junction breakdown and GIDL using MFLA in DRAM product

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this