Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes

Mu Jen Lai; Liann Be Chang; Ray Ming Lin; Chou Shuang Huang

doi:10.1143/APEX.3.072102

Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes

Mu Jen Lai^*, Liann Be Chang, Ray Ming Lin, Chou Shuang Huang

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

The improvement in efficiency droop was investigated by using an InGaN-based, double-heterostructure (DH) active region. The external quantum efficiency (EQE) is improved by 89.3% at a current density of 200 A/cm ² by inserting a 20-nm-thick p-type AlGaN as the electronblocking layer (EBL). The interface states created between the DH active region and EBL might be responsible for the effective level through the other suggested mechanisms besides the Auger loss. The redshift phenomenon of the electroluminescence (EL) peak wavelength is attributed to the bandgap renormalization, although the detailed mechanism associated with the efficiency droop remains unknown.

Original language	English
Article number	072102
Journal	Applied Physics Express
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.072102
State	Published - 07 2010

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title = "Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes",

abstract = "The improvement in efficiency droop was investigated by using an InGaN-based, double-heterostructure (DH) active region. The external quantum efficiency (EQE) is improved by 89.3\% at a current density of 200 A/cm 2 by inserting a 20-nm-thick p-type AlGaN as the electronblocking layer (EBL). The interface states created between the DH active region and EBL might be responsible for the effective level through the other suggested mechanisms besides the Auger loss. The redshift phenomenon of the electroluminescence (EL) peak wavelength is attributed to the bandgap renormalization, although the detailed mechanism associated with the efficiency droop remains unknown.",

author = "Lai, \{Mu Jen\} and Chang, \{Liann Be\} and Lin, \{Ray Ming\} and Huang, \{Chou Shuang\}",

year = "2010",

month = jul,

doi = "10.1143/APEX.3.072102",

language = "英语",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

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T1 - Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes

AU - Lai, Mu Jen

AU - Chang, Liann Be

AU - Lin, Ray Ming

AU - Huang, Chou Shuang

PY - 2010/7

Y1 - 2010/7

N2 - The improvement in efficiency droop was investigated by using an InGaN-based, double-heterostructure (DH) active region. The external quantum efficiency (EQE) is improved by 89.3% at a current density of 200 A/cm 2 by inserting a 20-nm-thick p-type AlGaN as the electronblocking layer (EBL). The interface states created between the DH active region and EBL might be responsible for the effective level through the other suggested mechanisms besides the Auger loss. The redshift phenomenon of the electroluminescence (EL) peak wavelength is attributed to the bandgap renormalization, although the detailed mechanism associated with the efficiency droop remains unknown.

AB - The improvement in efficiency droop was investigated by using an InGaN-based, double-heterostructure (DH) active region. The external quantum efficiency (EQE) is improved by 89.3% at a current density of 200 A/cm 2 by inserting a 20-nm-thick p-type AlGaN as the electronblocking layer (EBL). The interface states created between the DH active region and EBL might be responsible for the effective level through the other suggested mechanisms besides the Auger loss. The redshift phenomenon of the electroluminescence (EL) peak wavelength is attributed to the bandgap renormalization, although the detailed mechanism associated with the efficiency droop remains unknown.

UR - https://www.scopus.com/pages/publications/77954507821

U2 - 10.1143/APEX.3.072102

DO - 10.1143/APEX.3.072102

M3 - 文章

AN - SCOPUS:77954507821

SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 072102

ER -

Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes

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