Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

A. Prakash; S. Maikap; G. Chen; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2011.5872235

Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer

A. Prakash, S. Maikap^*, G. Chen, F. Chen, M. J. Kao, M. J. Tsai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Improved resistive switching memory characteristics in a W/Ti/Ta ₂O₅/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta₂O ₅ film with a thickness of 7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of 2000. The memory device has shown good endurance of at least 10⁴ cycles and excellent data retention at 85C.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	66-69
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2011.5872235
State	Published - 2011
Externally published	Yes
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan Duration: 25 04 2011 → 27 04 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan
City	Hsinchu
Period	25/04/11 → 27/04/11

Access to Document

10.1109/VTSA.2011.5872235

Cite this

Prakash, A., Maikap, S., Chen, G., Chen, F., Kao, M. J., & Tsai, M. J. (2011). Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 66-69). Article 5872235 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872235

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title = "Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer",

abstract = "Improved resistive switching memory characteristics in a W/Ti/Ta 2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O 5 film with a thickness of 7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of 2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention at 85C.",

author = "A. Prakash and S. Maikap and G. Chen and F. Chen and Kao, {M. J.} and Tsai, {M. J.}",

year = "2011",

doi = "10.1109/VTSA.2011.5872235",

language = "英语",

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pages = "66--69",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

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Prakash, A, Maikap, S, Chen, G, Chen, F, Kao, MJ & Tsai, MJ 2011, Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872235, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 66-69, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872235

Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. / Prakash, A.; Maikap, S.; Chen, G. et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 66-69 5872235 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Prakash A, Maikap S, Chen G, Chen F, Kao MJ, Tsai MJ. Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 66-69. 5872235. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872235