Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation

A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N₂O nitrided gate oxides and N₂O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N₂O-related technology extremely attractive and promising for future scaled devices.