Improvement of the Q-factor, for an adjustable inductor using a 90-μm silicon substrate on plastic

Hsuan Ling Kao*, C. S. Yeh, Li Chun Chang, Jeffrey S. Fu, Hsien Chin Chiu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

This article presents a four-port adjustable inductor with 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology on plastic. The inductor has a high Q-factor and a small size for multiband UWB applications. When the four-port adjustable inductor, on VLSI-standard Si substrate, operates near 3, 4, 7.5 and 9 GHz, it has a Q-factor of 6.5, 6.7, 8 and 11.5 and an inductance of 2.1, 1.6, 1.1, 0.6 nH, respectively. Reducing the thickness of the Si substrate to 90 μm and mounting it on plastic causes a 25-31% improvement in the Q-factor, without change in the inductance, due to a reduction in the parasitic effect from the Si substrate. This is useful for multiband applications.

Original languageEnglish
Pages (from-to)1597-1602
Number of pages6
JournalInternational Journal of Electronics
Volume98
Issue number11
DOIs
StatePublished - 11 2011

Keywords

  • Q-factor
  • adjustable inductor
  • inductance
  • plastic
  • thinned-down

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