Abstract
This article presents a four-port adjustable inductor with 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology on plastic. The inductor has a high Q-factor and a small size for multiband UWB applications. When the four-port adjustable inductor, on VLSI-standard Si substrate, operates near 3, 4, 7.5 and 9 GHz, it has a Q-factor of 6.5, 6.7, 8 and 11.5 and an inductance of 2.1, 1.6, 1.1, 0.6 nH, respectively. Reducing the thickness of the Si substrate to 90 μm and mounting it on plastic causes a 25-31% improvement in the Q-factor, without change in the inductance, due to a reduction in the parasitic effect from the Si substrate. This is useful for multiband applications.
Original language | English |
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Pages (from-to) | 1597-1602 |
Number of pages | 6 |
Journal | International Journal of Electronics |
Volume | 98 |
Issue number | 11 |
DOIs | |
State | Published - 11 2011 |
Keywords
- Q-factor
- adjustable inductor
- inductance
- plastic
- thinned-down