Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing

Min Lun Wu; Shou Yi Kuo; Fang I. Lai

doi:10.1109/CLEOPR.2009.5292605

Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing

Min Lun Wu^*
, Shou Yi Kuo
, Fang I. Lai

^*Corresponding author for this work

Department of Electronic Engineering

Yuan Ze University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH₃ ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%∼1.5%.

Original language	English
Title of host publication	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOIs	https://doi.org/10.1109/CLEOPR.2009.5292605
State	Published - 2009
Event	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China Duration: 30 08 2009 → 03 09 2009

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	China
City	Shanghai
Period	30/08/09 → 03/09/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

AlGaInP
Annealing
Hydrogen

Access to Document

10.1109/CLEOPR.2009.5292605

Cite this

@inproceedings{85b8da6cbf5348239e74df9abe4441e9,

title = "Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing",

abstract = "In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5\%∼1.5\%.",

keywords = "AlGaInP, Annealing, Hydrogen",

author = "Wu, \{Min Lun\} and Kuo, \{Shou Yi\} and Lai, \{Fang I.\}",

year = "2009",

doi = "10.1109/CLEOPR.2009.5292605",

language = "英语",

isbn = "9781424438303",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics",

note = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 30-08-2009 Through 03-09-2009",

}

Wu, ML, Kuo, SY & Lai, FI 2009, Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing. in CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics., 5292605, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics, Shanghai, China, 30/08/09. https://doi.org/10.1109/CLEOPR.2009.5292605

Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing. / Wu, Min Lun; Kuo, Shou Yi; Lai, Fang I.
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics. 2009. 5292605 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing

AU - Wu, Min Lun

AU - Kuo, Shou Yi

AU - Lai, Fang I.

PY - 2009

Y1 - 2009

N2 - In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%∼1.5%.

AB - In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%∼1.5%.

KW - AlGaInP

KW - Annealing

KW - Hydrogen

UR - https://www.scopus.com/pages/publications/71249092928

U2 - 10.1109/CLEOPR.2009.5292605

DO - 10.1109/CLEOPR.2009.5292605

M3 - 会议稿件

AN - SCOPUS:71249092928

SN - 9781424438303

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

T2 - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 30 August 2009 through 3 September 2009

ER -

Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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