Improvement on output-power stability of AlGalnP/GaAs light emitting diodes by hydrogen annealing

Min Lun Wu, Shou Yi Kuo, Fang I. Lai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this article, we report the improvement on the output-power stability of AlGalnP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%~1.5%.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
Duration: 30 08 200903 09 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country/TerritoryChina
CityShanghai
Period30/08/0903/09/09

Keywords

  • AlGalnP
  • Annealing
  • Hydrogen

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