Abstract
In this article, we report the improvement on the output-power stability of AlGalnP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%~1.5%.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 |
| State | Published - 2009 |
| Event | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China Duration: 30 08 2009 → 03 09 2009 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| ISSN (Electronic) | 2162-2701 |
Conference
| Conference | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 |
|---|---|
| Country/Territory | China |
| City | Shanghai |
| Period | 30/08/09 → 03/09/09 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
Keywords
- AlGalnP
- Annealing
- Hydrogen
Fingerprint
Dive into the research topics of 'Improvement on output-power stability of AlGalnP/GaAs light emitting diodes by hydrogen annealing'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver