Improvements of Fermi-level pinning and NBTI by fluorinated HfO 2-CMOS

Chao Sung Lai; Woei Cherng Wu; Huai Hsien Chiu; Jer Chyi Wang; Pai Chi Chou; Tien Sheng Chao

doi:10.1109/EDSSC.2010.5713757

Improvements of Fermi-level pinning and NBTI by fluorinated HfO ₂-CMOS

Chao Sung Lai, Woei Cherng Wu, Huai Hsien Chiu, Jer Chyi Wang, Pai Chi Chou, Tien Sheng Chao^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Improvement of Fermi-level pinning (FLP) and relaxation of negative-bias-temperature-instability (NBTI) for CMOS without interfacial layers was achieved by fluorine incorporation into HfO₂. The driving current capability was increased up to 48% and 45% for n-MOSFET and p-MOSFET, respectively. It's caused by the oxygen vacancy was blocked by the fluorine incorporated interface and resulted in the suppression of the interfacial oxide growth to achieved thinner effective oxide thickness (EOT). The improvement included the Fermi-level pinning shift from ∼0.1eV to ∼0.02eV for samples without and with fluorination, respectively. V_th shifts under NBTI stressing were relaxed from positive 350mv to negative 270mv for control and fluorinated samples, respectively. It is due to the Si-F bondings broken under NBTI stressing which the released-fluorine re-incorporate to passivate the HfO₂ bulk.

Original language	English
Title of host publication	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs	https://doi.org/10.1109/EDSSC.2010.5713757
State	Published - 2010
Event	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China Duration: 15 12 2010 → 17 12 2010

Publication series

Name	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Conference

Conference	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/Territory	China
City	Hong Kong
Period	15/12/10 → 17/12/10

Access to Document

10.1109/EDSSC.2010.5713757

Cite this

Lai, C. S., Wu, W. C., Chiu, H. H., Wang, J. C., Chou, P. C., & Chao, T. S. (2010). Improvements of Fermi-level pinning and NBTI by fluorinated HfO ₂-CMOS. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 Article 5713757 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713757

@inproceedings{ccbb7295106042ae9ef22ba99260de12,

title = "Improvements of Fermi-level pinning and NBTI by fluorinated HfO 2-CMOS",

abstract = "Improvement of Fermi-level pinning (FLP) and relaxation of negative-bias-temperature-instability (NBTI) for CMOS without interfacial layers was achieved by fluorine incorporation into HfO2. The driving current capability was increased up to 48% and 45% for n-MOSFET and p-MOSFET, respectively. It's caused by the oxygen vacancy was blocked by the fluorine incorporated interface and resulted in the suppression of the interfacial oxide growth to achieved thinner effective oxide thickness (EOT). The improvement included the Fermi-level pinning shift from ∼0.1eV to ∼0.02eV for samples without and with fluorination, respectively. Vth shifts under NBTI stressing were relaxed from positive 350mv to negative 270mv for control and fluorinated samples, respectively. It is due to the Si-F bondings broken under NBTI stressing which the released-fluorine re-incorporate to passivate the HfO2 bulk.",

author = "Lai, {Chao Sung} and Wu, {Woei Cherng} and Chiu, {Huai Hsien} and Wang, {Jer Chyi} and Chou, {Pai Chi} and Chao, {Tien Sheng}",

year = "2010",

doi = "10.1109/EDSSC.2010.5713757",

language = "英语",

isbn = "9781424499977",

series = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

booktitle = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

note = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 ; Conference date: 15-12-2010 Through 17-12-2010",

}

Lai, CS, Wu, WC, Chiu, HH, Wang, JC, Chou, PC & Chao, TS 2010, Improvements of Fermi-level pinning and NBTI by fluorinated HfO ₂-CMOS. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713757, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, 15/12/10. https://doi.org/10.1109/EDSSC.2010.5713757

Improvements of Fermi-level pinning and NBTI by fluorinated HfO ₂-CMOS. / Lai, Chao Sung; Wu, Woei Cherng; Chiu, Huai Hsien et al.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713757 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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