Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes

Gwo Mei Wu*, Ta Jen Chung, Tzer En Nee, Da Chuan Kuo, Wei Jen Chen, Chih Chun Ke, Cheng Wei Hung, Jen Cheng Wang, Nei Chuan Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

The improvements of quantum efficiency and thermal stability by using Si delta doping in blue In-GaN/GaN multiple quantum well (MQW) structures have been investigated. The high-resolution X-ray diffraction (HR-XRD) indicated better interface properties in the MQWs for Si delta doping structures. The Arrhenius plots of the temperature-dependent photoluminescence (PL) spectra were used to reveal the enhancements of the radiative recombination. The activation energy was increased from 115 to 140 meV for the InGaN/GaN MQW sample with Si delta doping. The improvements of the thermal stability and activation energy were attributed to the supply of electrons from the Si delta doping barrier region into the InGaN well layer and the increase in hole capturing by the higher energy barrier in the valence band. Si delta doping process plays a crucial role in carrier recombination to significantly suppress carrier leakage, which not only increases the exciton confinement, but also improves the quantum efficiency.

Original languageEnglish
Pages (from-to)2797-2801
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
StatePublished - 2007
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 22 10 200627 10 2006

Fingerprint

Dive into the research topics of 'Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes'. Together they form a unique fingerprint.

Cite this