Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation

Chia Hsuan Wu; Yung Hsiang Lin; Che Kai Lin; Hsien Chin Chiu; Ray Ming Lin

doi:10.1109/OECC.2009.5213211

Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation

Chia Hsuan Wu^*, Yung Hsiang Lin, Che Kai Lin, Hsien Chin Chiu, Ray Ming Lin

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.

Original language	English
Title of host publication	2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs	https://doi.org/10.1109/OECC.2009.5213211
State	Published - 2009
Event	2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China Duration: 13 07 2009 → 17 07 2009

Publication series

Name	2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference	2009 14th OptoElectronics and Communications Conference, OECC 2009
Country/Territory	China
City	Hong Kong
Period	13/07/09 → 17/07/09

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10.1109/OECC.2009.5213211

Cite this

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title = "Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation",

abstract = "In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.",

author = "Wu, {Chia Hsuan} and Lin, {Yung Hsiang} and Lin, {Che Kai} and Chiu, {Hsien Chin} and Lin, {Ray Ming}",

year = "2009",

doi = "10.1109/OECC.2009.5213211",

language = "英语",

isbn = "9781424441037",

series = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

booktitle = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

note = "2009 14th OptoElectronics and Communications Conference, OECC 2009 ; Conference date: 13-07-2009 Through 17-07-2009",

}

Wu, CH, Lin, YH, Lin, CK, Chiu, HC & Lin, RM 2009, Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5213211, 2009 14th OptoElectronics and Communications Conference, OECC 2009, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 13/07/09. https://doi.org/10.1109/OECC.2009.5213211

Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation. / Wu, Chia Hsuan; Lin, Yung Hsiang; Lin, Che Kai et al.
2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5213211 (2009 14th OptoElectronics and Communications Conference, OECC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chiu, Hsien Chin

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PY - 2009

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N2 - In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.

AB - In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.

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Improving the luminescence of InGaN/GaN blue: LEDs through selective ring-region ion implantation

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