Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

C. M. Tan; Y. F. Wong; P. H. Teoh; G. Y. Huang

doi:10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

C. M. Tan^*, Y. F. Wong, P. H. Teoh, G. Y. Huang

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P⁺-N⁺ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

Original language	English
Title of host publication	5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings
Editors	King-Jet Tseng
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	89-92
Number of pages	4
ISBN (Electronic)	0780378857
DOIs	https://doi.org/10.1109/PEDS.2003.1282685
State	Published - 2003
Externally published	Yes
Event	5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Singapore, Singapore Duration: 17 11 2003 → 20 11 2003

Publication series

Name	Proceedings of the International Conference on Power Electronics and Drive Systems
Volume	1

Conference

Conference	5th International Conference on Power Electronics and Drive Systems, PEDS 2003
Country/Territory	Singapore
City	Singapore
Period	17/11/03 → 20/11/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

CSTBT
IGBT
Reverse Blocking Voltage

Access to Document

10.1109/PEDS.2003.1282685

Cite this

Tan, C. M., Wong, Y. F., Teoh, P. H., & Huang, G. Y. (2003). Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. In K.-J. Tseng (Ed.), 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings (pp. 89-92). Article 1282685 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2003.1282685

Tan, C. M. ; Wong, Y. F. ; Teoh, P. H. et al. / Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. editor / King-Jet Tseng. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 89-92 (Proceedings of the International Conference on Power Electronics and Drive Systems).

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title = "Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor",

abstract = "Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.",

keywords = "CSTBT, IGBT, Reverse Blocking Voltage",

author = "Tan, {C. M.} and Wong, {Y. F.} and Teoh, {P. H.} and Huang, {G. Y.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 ; Conference date: 17-11-2003 Through 20-11-2003",

year = "2003",

doi = "10.1109/PEDS.2003.1282685",

language = "英语",

series = "Proceedings of the International Conference on Power Electronics and Drive Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "89--92",

editor = "King-Jet Tseng",

booktitle = "5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings",

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}

Tan, CM, Wong, YF, Teoh, PH & Huang, GY 2003, Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. in K-J Tseng (ed.), 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings., 1282685, Proceedings of the International Conference on Power Electronics and Drive Systems, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 89-92, 5th International Conference on Power Electronics and Drive Systems, PEDS 2003, Singapore, Singapore, 17/11/03. https://doi.org/10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. / Tan, C. M.; Wong, Y. F.; Teoh, P. H. et al.
5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. ed. / King-Jet Tseng. Institute of Electrical and Electronics Engineers Inc., 2003. p. 89-92 1282685 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

AU - Tan, C. M.

AU - Wong, Y. F.

AU - Teoh, P. H.

AU - Huang, G. Y.

PY - 2003

Y1 - 2003

N2 - Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

AB - Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

KW - CSTBT

KW - IGBT

KW - Reverse Blocking Voltage

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ER -

Tan CM, Wong YF, Teoh PH, Huang GY. Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. In Tseng KJ, editor, 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 89-92. 1282685. (Proceedings of the International Conference on Power Electronics and Drive Systems). doi: 10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

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Keywords

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