Impurity gettering toward residual damages in shallow junctions

Ruey Dar Chang*, Ter Fang Chen, Julia S. Fu

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

A Phenomenological model quantifying the gettering capability of incompletely annealed residual implant damages has been developed. Correlating with an accurate SIMS profile, the residual damages can be characterized empirically with a spatial distribution function. The gettering-induced uphill diffusion dynamics in the vicinity of the residual damage is obtained by coupling the gettering kinetics with the ordinary bulk diffusion equation. Effects of residual damages to dopant diffusivity are demonstrated for CMOS BF2+ and arsenic shallow junctions.

Original languageEnglish
Pages401-403
Number of pages3
StatePublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 26 08 199228 08 1992

Conference

ConferenceExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period26/08/9228/08/92

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