Impurity gettering toward residual damages in shallow junctions

Ruey Dar Chang; Ter Fang Chen; Julia S. Fu

Impurity gettering toward residual damages in shallow junctions

Ruey Dar Chang^*, Ter Fang Chen, Julia S. Fu

^*Corresponding author for this work

Organization

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

A Phenomenological model quantifying the gettering capability of incompletely annealed residual implant damages has been developed. Correlating with an accurate SIMS profile, the residual damages can be characterized empirically with a spatial distribution function. The gettering-induced uphill diffusion dynamics in the vicinity of the residual damage is obtained by coupling the gettering kinetics with the ordinary bulk diffusion equation. Effects of residual damages to dopant diffusivity are demonstrated for CMOS BF₂⁺ and arsenic shallow junctions.

Original language	English
Pages	401-403
Number of pages	3
State	Published - 1992
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 26 08 1992 → 28 08 1992

Conference

Conference	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	26/08/92 → 28/08/92

Cite this

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title = "Impurity gettering toward residual damages in shallow junctions",

abstract = "A Phenomenological model quantifying the gettering capability of incompletely annealed residual implant damages has been developed. Correlating with an accurate SIMS profile, the residual damages can be characterized empirically with a spatial distribution function. The gettering-induced uphill diffusion dynamics in the vicinity of the residual damage is obtained by coupling the gettering kinetics with the ordinary bulk diffusion equation. Effects of residual damages to dopant diffusivity are demonstrated for CMOS BF2+ and arsenic shallow junctions.",

author = "Chang, {Ruey Dar} and Chen, {Ter Fang} and Fu, {Julia S.}",

year = "1992",

language = "英语",

pages = "401--403",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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T1 - Impurity gettering toward residual damages in shallow junctions

AU - Chang, Ruey Dar

AU - Chen, Ter Fang

AU - Fu, Julia S.

PY - 1992

Y1 - 1992

N2 - A Phenomenological model quantifying the gettering capability of incompletely annealed residual implant damages has been developed. Correlating with an accurate SIMS profile, the residual damages can be characterized empirically with a spatial distribution function. The gettering-induced uphill diffusion dynamics in the vicinity of the residual damage is obtained by coupling the gettering kinetics with the ordinary bulk diffusion equation. Effects of residual damages to dopant diffusivity are demonstrated for CMOS BF2+ and arsenic shallow junctions.

AB - A Phenomenological model quantifying the gettering capability of incompletely annealed residual implant damages has been developed. Correlating with an accurate SIMS profile, the residual damages can be characterized empirically with a spatial distribution function. The gettering-induced uphill diffusion dynamics in the vicinity of the residual damage is obtained by coupling the gettering kinetics with the ordinary bulk diffusion equation. Effects of residual damages to dopant diffusivity are demonstrated for CMOS BF2+ and arsenic shallow junctions.

UR - http://www.scopus.com/inward/record.url?scp=0026960421&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:0026960421

SP - 401

EP - 403

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Impurity gettering toward residual damages in shallow junctions

Abstract

Conference

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