InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy

Biing Der Liu; Ray Ming Lin; Si Chen Lee; Tai Ping Sun

doi:10.1116/1.589314

InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy

Biing Der Liu^*, Ray Ming Lin, Si Chen Lee, Tai Ping Sun

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Despite the large lattice mismatch of 7.2% with respect to GaAs, the InAs photoconductor has been successfully fabricated on the GaAs substrate by molecular-beam epitaxy. Both the responsivity and the detectivity of the detector depend on the bias voltage across the device. When tested under an 800 K blackbody source, the highest achieved responsivity at 77 K is 34.5 A/W. The maximum specific detectivity is 1.3 × 10¹¹ cm Hz^1/2/W at 77 K. At 300 K, the highest responsivity and detectivity are 0.7 A/W and 2.1 × 10⁸ cm Hz^1/2/W, respectively.

Original language	English
Pages (from-to)	321-324
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.589314
State	Published - 1997
Externally published	Yes

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title = "InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy",

abstract = "Despite the large lattice mismatch of 7.2% with respect to GaAs, the InAs photoconductor has been successfully fabricated on the GaAs substrate by molecular-beam epitaxy. Both the responsivity and the detectivity of the detector depend on the bias voltage across the device. When tested under an 800 K blackbody source, the highest achieved responsivity at 77 K is 34.5 A/W. The maximum specific detectivity is 1.3 × 1011 cm Hz1/2/W at 77 K. At 300 K, the highest responsivity and detectivity are 0.7 A/W and 2.1 × 108 cm Hz1/2/W, respectively.",

author = "Liu, {Biing Der} and Lin, {Ray Ming} and Lee, {Si Chen} and Sun, {Tai Ping}",

year = "1997",

doi = "10.1116/1.589314",

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T1 - InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy

AU - Liu, Biing Der

AU - Lin, Ray Ming

AU - Lee, Si Chen

AU - Sun, Tai Ping

PY - 1997

Y1 - 1997

N2 - Despite the large lattice mismatch of 7.2% with respect to GaAs, the InAs photoconductor has been successfully fabricated on the GaAs substrate by molecular-beam epitaxy. Both the responsivity and the detectivity of the detector depend on the bias voltage across the device. When tested under an 800 K blackbody source, the highest achieved responsivity at 77 K is 34.5 A/W. The maximum specific detectivity is 1.3 × 1011 cm Hz1/2/W at 77 K. At 300 K, the highest responsivity and detectivity are 0.7 A/W and 2.1 × 108 cm Hz1/2/W, respectively.

AB - Despite the large lattice mismatch of 7.2% with respect to GaAs, the InAs photoconductor has been successfully fabricated on the GaAs substrate by molecular-beam epitaxy. Both the responsivity and the detectivity of the detector depend on the bias voltage across the device. When tested under an 800 K blackbody source, the highest achieved responsivity at 77 K is 34.5 A/W. The maximum specific detectivity is 1.3 × 1011 cm Hz1/2/W at 77 K. At 300 K, the highest responsivity and detectivity are 0.7 A/W and 2.1 × 108 cm Hz1/2/W, respectively.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy

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