Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition

Chia Ming Lee; Hwen Fen Hong; Chang Cheng Chuo; Tzer En Nee; Jen Inn Chyi

Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition

Chia Ming Lee^*
, Hwen Fen Hong
, Chang Cheng Chuo
, Tzer En Nee
, Jen Inn Chyi

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.

Original language	English
Pages (from-to)	227-231
Number of pages	5
Journal	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume	7
Issue number	3
State	Published - 08 2000
Externally published	Yes

Cite this

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title = "Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition",

abstract = "The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.",

keywords = "二次離子質譜儀, 擴散, 有機金屬化學氣相沈積, 氮化鎵, 鎂摻雜",

author = "Lee, \{Chia Ming\} and Hong, \{Hwen Fen\} and Chuo, \{Chang Cheng\} and Nee, \{Tzer En\} and Chyi, \{Jen Inn\}",

year = "2000",

month = aug,

language = "英语",

volume = "7",

pages = "227--231",

journal = "Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an",

issn = "1023-4462",

publisher = "Chinese Institute of Engineers",

number = "3",

}

Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition. / Lee, Chia Ming; Hong, Hwen Fen; Chuo, Chang Cheng et al.
In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, Vol. 7, No. 3, 08.2000, p. 227-231.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition

AU - Lee, Chia Ming

AU - Hong, Hwen Fen

AU - Chuo, Chang Cheng

AU - Nee, Tzer En

AU - Chyi, Jen Inn

PY - 2000/8

Y1 - 2000/8

N2 - The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.

AB - The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.

KW - 二次離子質譜儀

KW - 擴散

KW - 有機金屬化學氣相沈積

KW - 氮化鎵

KW - 鎂摻雜

UR - https://www.scopus.com/pages/publications/0034246330

M3 - 文章

AN - SCOPUS:0034246330

SN - 1023-4462

VL - 7

SP - 227

EP - 231

JO - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

JF - Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an

IS - 3

ER -

Incorporation of Mg in GaN grown by metal-organic chemical vapor deposition

Abstract

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