Influence of carrier injection on resistive switching of CaCu 3Ti4O12 thin films with Ni electrode

Li Chun Chang; Cheng Huan Yang; Hsuan Ling Kao

doi:10.1016/j.tsf.2011.01.150

Influence of carrier injection on resistive switching of CaCu ₃Ti₄O₁₂ thin films with Ni electrode

Li Chun Chang^*, Cheng Huan Yang, Hsuan Ling Kao

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu₃Ti₄O₁₂ (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O₂ atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.

Original language	English
Pages (from-to)	5095-5098
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2011.01.150
State	Published - 31 05 2011

Keywords

Nickel
Nonvolatile memory
Perovskite
Sputtering
Thin film

Access to Document

10.1016/j.tsf.2011.01.150

Cite this

@article{9a907e7c8c9b428f918b879b31762433,

title = "Influence of carrier injection on resistive switching of CaCu 3Ti4O12 thin films with Ni electrode",

abstract = "The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu3Ti4O12 (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O2 atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.",

keywords = "Nickel, Nonvolatile memory, Perovskite, Sputtering, Thin film",

author = "Chang, {Li Chun} and Yang, {Cheng Huan} and Kao, {Hsuan Ling}",

year = "2011",

month = may,

day = "31",

doi = "10.1016/j.tsf.2011.01.150",

language = "英语",

volume = "519",

pages = "5095--5098",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "15",

}

TY - JOUR

T1 - Influence of carrier injection on resistive switching of CaCu 3Ti4O12 thin films with Ni electrode

AU - Chang, Li Chun

AU - Yang, Cheng Huan

AU - Kao, Hsuan Ling

PY - 2011/5/31

Y1 - 2011/5/31

N2 - The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu3Ti4O12 (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O2 atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.

AB - The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu3Ti4O12 (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O2 atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.

KW - Nickel

KW - Nonvolatile memory

KW - Perovskite

KW - Sputtering

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=79957644822&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.01.150

DO - 10.1016/j.tsf.2011.01.150

M3 - 文章

AN - SCOPUS:79957644822

SN - 0040-6090

VL - 519

SP - 5095

EP - 5098

JO - Thin Solid Films

JF - Thin Solid Films

IS - 15

ER -

Influence of carrier injection on resistive switching of CaCu ₃Ti₄O₁₂ thin films with Ni electrode

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this