Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

S. P. Fu; T. J. Lin; W. S. Su; C. Y. Shieh; Y. F. Chen; C. A. Chang; N. C. Chen; P. H. Chang

doi:10.1063/1.2204327

Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

S. P. Fu^*
, T. J. Lin
, W. S. Su
, C. Y. Shieh
, Y. F. Chen
, C. A. Chang
, N. C. Chen
, P. H. Chang

^*Corresponding author for this work

National Taiwan University
Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

16 Scopus citations

Abstract

We report the investigation of surface morphologies and transport and optical properties of hydrogenated InN epifilms. The average rms surface roughness decreases from 24 nm on the as-grown sample to 13.2 nm after hydrogenation. The free electron concentration can be increased or decreased depending on the duration of hydrogenation. The linewidth of the photoluminescence spectra can be reduced, and the peak intensity can be enhanced by about three times. All our results indicate that the physical properties of InN films can be improved by hydrogenation. Possible origins of the underlying mechanism have been proposed to explain the improvement.

Original language	English
Article number	126102
Journal	Journal of Applied Physics
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.2204327
State	Published - 2006

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@article{7e7cd71009184ebba7ebd36c74a940bf,

title = "Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms",

abstract = "We report the investigation of surface morphologies and transport and optical properties of hydrogenated InN epifilms. The average rms surface roughness decreases from 24 nm on the as-grown sample to 13.2 nm after hydrogenation. The free electron concentration can be increased or decreased depending on the duration of hydrogenation. The linewidth of the photoluminescence spectra can be reduced, and the peak intensity can be enhanced by about three times. All our results indicate that the physical properties of InN films can be improved by hydrogenation. Possible origins of the underlying mechanism have been proposed to explain the improvement.",

author = "Fu, \{S. P.\} and Lin, \{T. J.\} and Su, \{W. S.\} and Shieh, \{C. Y.\} and Chen, \{Y. F.\} and Chang, \{C. A.\} and Chen, \{N. C.\} and Chang, \{P. H.\}",

year = "2006",

doi = "10.1063/1.2204327",

language = "英语",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

AU - Fu, S. P.

AU - Lin, T. J.

AU - Su, W. S.

AU - Shieh, C. Y.

AU - Chen, Y. F.

AU - Chang, C. A.

AU - Chen, N. C.

AU - Chang, P. H.

PY - 2006

Y1 - 2006

N2 - We report the investigation of surface morphologies and transport and optical properties of hydrogenated InN epifilms. The average rms surface roughness decreases from 24 nm on the as-grown sample to 13.2 nm after hydrogenation. The free electron concentration can be increased or decreased depending on the duration of hydrogenation. The linewidth of the photoluminescence spectra can be reduced, and the peak intensity can be enhanced by about three times. All our results indicate that the physical properties of InN films can be improved by hydrogenation. Possible origins of the underlying mechanism have been proposed to explain the improvement.

AB - We report the investigation of surface morphologies and transport and optical properties of hydrogenated InN epifilms. The average rms surface roughness decreases from 24 nm on the as-grown sample to 13.2 nm after hydrogenation. The free electron concentration can be increased or decreased depending on the duration of hydrogenation. The linewidth of the photoluminescence spectra can be reduced, and the peak intensity can be enhanced by about three times. All our results indicate that the physical properties of InN films can be improved by hydrogenation. Possible origins of the underlying mechanism have been proposed to explain the improvement.

UR - https://www.scopus.com/pages/publications/33745713685

U2 - 10.1063/1.2204327

DO - 10.1063/1.2204327

M3 - 文章

AN - SCOPUS:33745713685

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 126102

ER -

Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

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