Abstract
This paper describes the physical properties and electrical characteristics of thin Y 2O 3 gate oxides grown on silicon substrates through reactive radiofrequency (RF) sputtering. The structural and morphological features of these films were studied using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. We found that the Y 2O 3 gate film prepared under an argon-to-oxygen flow ratio of 25:5 and annealed at 700°C exhibited a reduced equivalent oxide thickness, gate leakage current, interfacial density of states, and hysteresis voltage; it also showed an increased breakdown voltage. We attribute this behavior to (1) the optimum oxygen content in the metal oxide film preventing amorphous silica or silicate from forming at the Y 2O 3/Si interface and (2) the low surface roughness. These materials also exhibit negligible degrees of charge trapping at high electric field stress.
Original language | English |
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Pages (from-to) | 1395-1403 |
Number of pages | 9 |
Journal | Journal of Electronic Materials |
Volume | 36 |
Issue number | 10 |
DOIs | |
State | Published - 10 2007 |
Keywords
- Amorphous silica
- And surface roughness
- Gate leakage current
- Hysteresis voltage
- Interfacial density of states
- Silicate
- Y O gate oxide