Influence of oxygen content on the structural and pH-sensitive properties of thin Nd₂O₃ electrolyte-insulator-semiconductor

Engineering

• Properties 100%
• Semiconductor 100%
• Oxygen Content 100%
• Characteristics 50%
• Sensing Membrane 50%
• Silicon Substrate 50%
• Surfaces 50%
• Roughness 50%
• High Sensitivity 50%
• Forming 50%
• Ray Diffraction 50%
• Structural Property 50%
• Reactive Sputtering 50%
• Hysteresis Voltage 50%
• High Density 50%
• Growth Condition 50%
• Small Hysteresis 50%
• Binding Site 50%

Chemistry

• Electrolyte 100%
• Semiconductor 100%
• Nonconductor 100%
• Dioxygen 100%
• Liquid Film 66%
• Aqueous Solution 33%
• X-Ray Diffraction 33%
• Oxide 33%
• Voltage 33%
• Rate 33%
• Density 33%
• Buffer Solution 33%
• Atomic Force Microscopy 33%
• Argon 33%
• Reactive Sputtering 33%
• Binding Site 33%
• Surface Roughness 33%

Material Science

• Semiconductor Material 100%
• Electrolyte 100%
• Membrane 50%
• Devices 50%
• Silicon 50%
• Density 50%
• X-Ray Diffraction 50%
• Surface Roughness 50%
• Structural Property 50%
• Atomic Force Microscopy 50%
• Argon 50%
• Buffer Solution 50%