Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

Yao Hong You; Vin Cent Su; Ti En Ho; Bo Wen Lin; Ming Lun Lee; Atanu Das; Wen Ching Hsu; Chieh Hsiung Kuan; Ray Ming Lin

doi:10.1186/1556-276X-9-596

Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

Yao Hong You, Vin Cent Su, Ti En Ho, Bo Wen Lin, Ming Lun Lee, Atanu Das, Wen Ching Hsu, Chieh Hsiung Kuan, Ray Ming Lin^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).

Original language	English
Article number	596
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-596
State	Published - 2014

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Publisher Copyright:
© 2014, You et al.; licensee Springer.

Keywords

GaN
Light-emitting diodes
Patterned sapphire substrates
Quantum-confined Stark effect

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10.1186/1556-276X-9-596

Cite this

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title = "Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs",

abstract = "This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).",

keywords = "GaN, Light-emitting diodes, Patterned sapphire substrates, Quantum-confined Stark effect",

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doi = "10.1186/1556-276X-9-596",

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journal = "Nanoscale Research Letters",

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T1 - Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

AU - You, Yao Hong

AU - Su, Vin Cent

AU - Ho, Ti En

AU - Lin, Bo Wen

AU - Lee, Ming Lun

AU - Das, Atanu

AU - Hsu, Wen Ching

AU - Kuan, Chieh Hsiung

AU - Lin, Ray Ming

PY - 2014

Y1 - 2014

N2 - This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).

AB - This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).

KW - GaN

KW - Light-emitting diodes

KW - Patterned sapphire substrates

KW - Quantum-confined Stark effect

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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

Abstract

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Keywords

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