Influence of plasma treatment and cleaning on vacuum wafer bonding

Wei Bo Yu; Cher Ming Tan; Jun Wei; Shu Sheng Deng; Mui Ling Nai

doi:10.1109/EPTC.2003.1271532

Influence of plasma treatment and cleaning on vacuum wafer bonding

Wei Bo Yu, Cher Ming Tan, Jun Wei, Shu Sheng Deng, Mui Ling Nai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Direct wafer bonding was performed in vacuum. We compared two kinds of bonding, Si to Si and Si to SiO₂, in three different circumstances: Bonded in vacuum only, bonded in vacuum after plasma treatment and bonded in vacuum after plasma treatment and RCA1 cleaning. From the comparison of the bonding strength, we found that in both cases, Si-Si and Si-SiO₂, plasma treatment in vacuum bonding degrades the bonding quality if there is no RCA cleaning processed after it, even when RCA cleaning is processed after plasma treatment, the bonding strength is almost the same as the one without plasma treatment. But in traditional plasma activation wafer bonding in air, plasma treatment can improve the bond strength evidently. The reason for this discrepancy is supposed to be that the "vacuum" plays a main role in vacuum wafer bonding, rather than the plasma treatment. On the other hand, the plasma also induces contamination and damage to the surfaces, which increases the unbonded area as shown by means of the scanning acoustic microscope (SAM).

Original language	English
Title of host publication	Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003
Editors	Mahadevan K. Iyer, Yew Cheong Mui, Kok Chuan Toh
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	294-297
Number of pages	4
ISBN (Electronic)	0780382056, 9780780382053
DOIs	https://doi.org/10.1109/EPTC.2003.1271532
State	Published - 2003
Externally published	Yes
Event	5th Electronics Packaging Technology Conference, EPTC 2003 - Singapore, Singapore Duration: 10 12 2003 → 12 12 2003

Publication series

Name	Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003

Conference

Conference	5th Electronics Packaging Technology Conference, EPTC 2003
Country/Territory	Singapore
City	Singapore
Period	10/12/03 → 12/12/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

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10.1109/EPTC.2003.1271532

Cite this

Yu, W. B., Tan, C. M., Wei, J., Deng, S. S., & Nai, M. L. (2003). Influence of plasma treatment and cleaning on vacuum wafer bonding. In M. K. Iyer, Y. C. Mui, & K. C. Toh (Eds.), Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003 (pp. 294-297). Article 1271532 (Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2003.1271532

Yu, Wei Bo ; Tan, Cher Ming ; Wei, Jun et al. / Influence of plasma treatment and cleaning on vacuum wafer bonding. Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003. editor / Mahadevan K. Iyer ; Yew Cheong Mui ; Kok Chuan Toh. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 294-297 (Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003).

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title = "Influence of plasma treatment and cleaning on vacuum wafer bonding",

abstract = "Direct wafer bonding was performed in vacuum. We compared two kinds of bonding, Si to Si and Si to SiO2, in three different circumstances: Bonded in vacuum only, bonded in vacuum after plasma treatment and bonded in vacuum after plasma treatment and RCA1 cleaning. From the comparison of the bonding strength, we found that in both cases, Si-Si and Si-SiO2, plasma treatment in vacuum bonding degrades the bonding quality if there is no RCA cleaning processed after it, even when RCA cleaning is processed after plasma treatment, the bonding strength is almost the same as the one without plasma treatment. But in traditional plasma activation wafer bonding in air, plasma treatment can improve the bond strength evidently. The reason for this discrepancy is supposed to be that the {"}vacuum{"} plays a main role in vacuum wafer bonding, rather than the plasma treatment. On the other hand, the plasma also induces contamination and damage to the surfaces, which increases the unbonded area as shown by means of the scanning acoustic microscope (SAM).",

author = "Yu, {Wei Bo} and Tan, {Cher Ming} and Jun Wei and Deng, {Shu Sheng} and Nai, {Mui Ling}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Electronics Packaging Technology Conference, EPTC 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

year = "2003",

doi = "10.1109/EPTC.2003.1271532",

language = "英语",

series = "Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "294--297",

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Yu, WB, Tan, CM, Wei, J, Deng, SS & Nai, ML 2003, Influence of plasma treatment and cleaning on vacuum wafer bonding. in MK Iyer, YC Mui & KC Toh (eds), Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003., 1271532, Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 294-297, 5th Electronics Packaging Technology Conference, EPTC 2003, Singapore, Singapore, 10/12/03. https://doi.org/10.1109/EPTC.2003.1271532

Influence of plasma treatment and cleaning on vacuum wafer bonding. / Yu, Wei Bo; Tan, Cher Ming; Wei, Jun et al.
Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003. ed. / Mahadevan K. Iyer; Yew Cheong Mui; Kok Chuan Toh. Institute of Electrical and Electronics Engineers Inc., 2003. p. 294-297 1271532 (Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wei, Jun

AU - Deng, Shu Sheng

AU - Nai, Mui Ling

PY - 2003

Y1 - 2003

N2 - Direct wafer bonding was performed in vacuum. We compared two kinds of bonding, Si to Si and Si to SiO2, in three different circumstances: Bonded in vacuum only, bonded in vacuum after plasma treatment and bonded in vacuum after plasma treatment and RCA1 cleaning. From the comparison of the bonding strength, we found that in both cases, Si-Si and Si-SiO2, plasma treatment in vacuum bonding degrades the bonding quality if there is no RCA cleaning processed after it, even when RCA cleaning is processed after plasma treatment, the bonding strength is almost the same as the one without plasma treatment. But in traditional plasma activation wafer bonding in air, plasma treatment can improve the bond strength evidently. The reason for this discrepancy is supposed to be that the "vacuum" plays a main role in vacuum wafer bonding, rather than the plasma treatment. On the other hand, the plasma also induces contamination and damage to the surfaces, which increases the unbonded area as shown by means of the scanning acoustic microscope (SAM).

AB - Direct wafer bonding was performed in vacuum. We compared two kinds of bonding, Si to Si and Si to SiO2, in three different circumstances: Bonded in vacuum only, bonded in vacuum after plasma treatment and bonded in vacuum after plasma treatment and RCA1 cleaning. From the comparison of the bonding strength, we found that in both cases, Si-Si and Si-SiO2, plasma treatment in vacuum bonding degrades the bonding quality if there is no RCA cleaning processed after it, even when RCA cleaning is processed after plasma treatment, the bonding strength is almost the same as the one without plasma treatment. But in traditional plasma activation wafer bonding in air, plasma treatment can improve the bond strength evidently. The reason for this discrepancy is supposed to be that the "vacuum" plays a main role in vacuum wafer bonding, rather than the plasma treatment. On the other hand, the plasma also induces contamination and damage to the surfaces, which increases the unbonded area as shown by means of the scanning acoustic microscope (SAM).

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Yu WB, Tan CM, Wei J, Deng SS, Nai ML. Influence of plasma treatment and cleaning on vacuum wafer bonding. In Iyer MK, Mui YC, Toh KC, editors, Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 294-297. 1271532. (Proceedings of 5th Electronics Packaging Technology Conference, EPTC 2003). doi: 10.1109/EPTC.2003.1271532

Influence of plasma treatment and cleaning on vacuum wafer bonding

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