Influence of strong reverse-bias on the leakage behavior of light-emitting diodes

Y. N. Wang, C. Y. Tseng, Y. C. Chen, N. C. Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Leakage current is an important property in InGaN light-emitting diodes (LEDs). An LED chip is operated using strong reverse-bias to increase its leakage current. The leakage current behavior of the operated LED chip is compared with that of an unoperated LED chip.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
StatePublished - 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 26 08 200726 08 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
Country/TerritoryKorea, Republic of
CitySeoul
Period26/08/0726/08/07

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