Influence of Switching Property for Gd2O3 ReRAM by NH3 Plasma Treatment

Yu-Ren Ye, Jer-Chyi Wang, Chao-Sung Lai, I-Ting Wang, Yu-Hsuan Lin

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2010
Event	International Electron Device and Materials Symposium (IEDMS 2010) - Taoyuan, Taiwan Duration: 18 11 2010 → 19 11 2010

Conference	International Electron Device and Materials Symposium (IEDMS 2010)
Period	18/11/10 → 19/11/10

Cite this

@conference{885c9c4b4a6e4c089057fa85c4350475,

title = "Influence of Switching Property for Gd2O3 ReRAM by NH3 Plasma Treatment",

author = "Yu-Ren Ye and Jer-Chyi Wang and Chao-Sung Lai and I-Ting Wang and Yu-Hsuan Lin",

year = "2010",

language = "American English",

note = "International Electron Device and Materials Symposium (IEDMS 2010) ; Conference date: 18-11-2010 Through 19-11-2010",

}