Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor

Libin Liu; Zhigang Zhang; Jing Wang; Jun Xu; Yi Ting Lin; Chao Sung Lai

doi:10.1109/ISNE.2014.6839361

Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor

Libin Liu, Zhigang Zhang, Jing Wang, Jun Xu, Yi Ting Lin, Chao Sung Lai

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pH_pzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pH_pzc•

Original language	English
Title of host publication	2014 International Symposium on Next-Generation Electronics, ISNE 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479947805
DOIs	https://doi.org/10.1109/ISNE.2014.6839361
State	Published - 2014
Event	3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan Duration: 07 05 2014 → 10 05 2014

Publication series

Name	2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference	3rd International Symposium on Next-Generation Electronics, ISNE 2014
Country/Territory	Taiwan
City	Taoyuan
Period	07/05/14 → 10/05/14

Keywords

ISFET
flash
model
pH
sensitivity

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10.1109/ISNE.2014.6839361

Cite this

Liu, L., Zhang, Z., Wang, J., Xu, J., Lin, Y. T., & Lai, C. S. (2014). Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor. In 2014 International Symposium on Next-Generation Electronics, ISNE 2014 Article 6839361 (2014 International Symposium on Next-Generation Electronics, ISNE 2014). IEEE Computer Society. https://doi.org/10.1109/ISNE.2014.6839361

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title = "Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor",

abstract = "The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pHpzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pHpzc•",

keywords = "ISFET, flash, model, pH, sensitivity",

author = "Libin Liu and Zhigang Zhang and Jing Wang and Jun Xu and Lin, {Yi Ting} and Lai, {Chao Sung}",

year = "2014",

doi = "10.1109/ISNE.2014.6839361",

language = "英语",

isbn = "9781479947805",

series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

publisher = "IEEE Computer Society",

booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

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note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",

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Liu, L, Zhang, Z, Wang, J, Xu, J, Lin, YT & Lai, CS 2014, Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor. in 2014 International Symposium on Next-Generation Electronics, ISNE 2014., 6839361, 2014 International Symposium on Next-Generation Electronics, ISNE 2014, IEEE Computer Society, 3rd International Symposium on Next-Generation Electronics, ISNE 2014, Taoyuan, Taiwan, 07/05/14. https://doi.org/10.1109/ISNE.2014.6839361

Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor. / Liu, Libin; Zhang, Zhigang; Wang, Jing et al.
2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 2014. 6839361 (2014 International Symposium on Next-Generation Electronics, ISNE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor

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AU - Lin, Yi Ting

AU - Lai, Chao Sung

PY - 2014

Y1 - 2014

N2 - The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pHpzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pHpzc•

AB - The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pHpzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pHpzc•

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KW - flash

KW - model

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PB - IEEE Computer Society

T2 - 3rd International Symposium on Next-Generation Electronics, ISNE 2014

Y2 - 7 May 2014 through 10 May 2014

ER -

Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor

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Publication series

Conference

Keywords

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