Abstract
In this letter, we investigate the external quantum efficiency (EQE) and efficiency droop characteristics of InGaNbased light-emitting diodes (LEDs) incorporating AlxGa1-xN staircase electron blocking layers (EBLs). The LED featuring a composition-stepped EBL (x: 0.21, 0.14, and 0.07) exhibited the highest EQE under low current levels, but a severe efficiency droop at high current levels. In contrast, the LED with a composition-stepped EBL (x: 0.07, 0.14, and 0.21) exhibited a significant improvement in its onset of droop and a mitigated efficiency droop; we ascribe these features to the increased hole injection rate and the decreased built-in electric field.
Original language | English |
---|---|
Article number | 6269920 |
Pages (from-to) | 1737-1740 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 24 |
Issue number | 19 |
DOIs | |
State | Published - 2012 |
Keywords
- Droop
- InGaN
- Light-emitting diodes (LEDs)
- Staircase electron blocking layer (EBL)