InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer

Shoou Jinn Chang*, Sheng Fu Yu, Ray Ming Lin, Shuguang Li, Tsung Hsun Chiang, Sheng Po Chang, Chang Ho Chen

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

9 Scopus citations

Abstract

In this letter, we investigate the external quantum efficiency (EQE) and efficiency droop characteristics of InGaNbased light-emitting diodes (LEDs) incorporating AlxGa1-xN staircase electron blocking layers (EBLs). The LED featuring a composition-stepped EBL (x: 0.21, 0.14, and 0.07) exhibited the highest EQE under low current levels, but a severe efficiency droop at high current levels. In contrast, the LED with a composition-stepped EBL (x: 0.07, 0.14, and 0.21) exhibited a significant improvement in its onset of droop and a mitigated efficiency droop; we ascribe these features to the increased hole injection rate and the decreased built-in electric field.

Original languageEnglish
Article number6269920
Pages (from-to)1737-1740
Number of pages4
JournalIEEE Photonics Technology Letters
Volume24
Issue number19
DOIs
StatePublished - 2012

Keywords

  • Droop
  • InGaN
  • Light-emitting diodes (LEDs)
  • Staircase electron blocking layer (EBL)

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