InGaN light-emitting diodes with the strained ALGaN/INgaN multiple quantum barriers

Chia Lung Tsai*, Guan Shan Liu, Jia Qing Lin, Hung Wei Tseng, Chien Yu Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this article, we propose to use the strained Al0.03Ga 0.97N/In0.01Ga0.99N superlattice as the quantum barrier of the InGaN LEDs. The advantage of doing this could be thought of relieving the biaxial strain for the normal InGaN/AlGaN MQWs, and improving the crystalline quality. Experimentally, high-resolution X-ray diffraction (HRXRD) was used to clarify the structural properties of the as-grown samples. As a result, the crystalline quality of the proposed LEDs does not degrade even incorporated an AlGaN into the barrier layer. For the LEDs with a strained-layer superlattice (SLS) quantum barrier, the observed PL intensity at 300 K becomes intense together with a blue shift of the emission peak that may be attributed to the alleviation of quantum-confined Stark effect (QCSE) as evaluated from the biased PL analysis.

Original languageEnglish
Title of host publication2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Pages115-117
Number of pages3
DOIs
StatePublished - 2009
Event2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States
Duration: 02 06 200905 06 2009

Publication series

Name2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Conference

Conference2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Country/TerritoryUnited States
CityTraverse City, MI
Period02/06/0905/06/09

Keywords

  • InGaN
  • Light emitting diodes (LEDs)
  • QCSE
  • Quantum barriers

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