@inproceedings{aa400f5ffc454df3a411bfa42c07b51e,
title = "InGaN light-emitting diodes with the strained ALGaN/INgaN multiple quantum barriers",
abstract = "In this article, we propose to use the strained Al0.03Ga 0.97N/In0.01Ga0.99N superlattice as the quantum barrier of the InGaN LEDs. The advantage of doing this could be thought of relieving the biaxial strain for the normal InGaN/AlGaN MQWs, and improving the crystalline quality. Experimentally, high-resolution X-ray diffraction (HRXRD) was used to clarify the structural properties of the as-grown samples. As a result, the crystalline quality of the proposed LEDs does not degrade even incorporated an AlGaN into the barrier layer. For the LEDs with a strained-layer superlattice (SLS) quantum barrier, the observed PL intensity at 300 K becomes intense together with a blue shift of the emission peak that may be attributed to the alleviation of quantum-confined Stark effect (QCSE) as evaluated from the biased PL analysis.",
keywords = "InGaN, Light emitting diodes (LEDs), QCSE, Quantum barriers",
author = "Tsai, {Chia Lung} and Liu, {Guan Shan} and Lin, {Jia Qing} and Tseng, {Hung Wei} and Wang, {Chien Yu}",
year = "2009",
doi = "10.1109/NMDC.2009.5167537",
language = "英语",
isbn = "9781424446964",
series = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",
pages = "115--117",
booktitle = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",
note = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 ; Conference date: 02-06-2009 Through 05-06-2009",
}