InGaN p-i-n ultraviolet-A band-pass photodetectors

T. K. Ko; S. C. Shei; S. J. Chang; Y. Z. Chiou; R. M. Lin; W. S. Chen; C. F. Shen; C. S. Chang; K. W. Lin

doi:10.1049/ip-opt:20050083

InGaN p-i-n ultraviolet-A band-pass photodetectors

T. K. Ko^*, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang, K. W. Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10^-10 and 4×10^-10 A for FC p-i-n PDs with i-In_0.1Ga_0.9N and i-In _0.05Ga_0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

Original language	English
Pages (from-to)	212-214
Number of pages	3
Journal	IEE Proceedings: Optoelectronics
Volume	153
Issue number	4
DOIs	https://doi.org/10.1049/ip-opt:20050083
State	Published - 08 2006

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@article{843820d636d44dfdbbf4b2a6de3d353c,

title = "InGaN p-i-n ultraviolet-A band-pass photodetectors",

abstract = "InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.",

author = "Ko, {T. K.} and Shei, {S. C.} and Chang, {S. J.} and Chiou, {Y. Z.} and Lin, {R. M.} and Chen, {W. S.} and Shen, {C. F.} and Chang, {C. S.} and Lin, {K. W.}",

year = "2006",

month = aug,

doi = "10.1049/ip-opt:20050083",

language = "英语",

volume = "153",

pages = "212--214",

journal = "IEE Proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "Institute of Electrical Engineers",

number = "4",

}

TY - JOUR

T1 - InGaN p-i-n ultraviolet-A band-pass photodetectors

AU - Ko, T. K.

AU - Shei, S. C.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Lin, R. M.

AU - Chen, W. S.

AU - Shen, C. F.

AU - Chang, C. S.

AU - Lin, K. W.

PY - 2006/8

Y1 - 2006/8

N2 - InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

AB - InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

UR - http://www.scopus.com/inward/record.url?scp=33747123640&partnerID=8YFLogxK

U2 - 10.1049/ip-opt:20050083

DO - 10.1049/ip-opt:20050083

M3 - 文章

AN - SCOPUS:33747123640

SN - 1350-2433

VL - 153

SP - 212

EP - 214

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 4

ER -

InGaN p-i-n ultraviolet-A band-pass photodetectors

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