@inproceedings{bca1425aa7e440089acbb12a14132e21,
title = "InGaN/GaN multiple quantum wells with silicon delta doping in GaN barriers for light-emitting diodes",
abstract = "Fn this paper, silicon delta doping was incorporated in the GaN barriers of InGaN/GaN multiple quantum well (MQW) structures for blue light-emitting diodes. High-order satellite peaks from X-ray diffraction suggested indium incorporation in the hetero-structures. The indium content has been 0.171 and 0.192 for the silicon delta doped and undoped samples, respectively, by Vegard's rule. Thermodynamic analysis by Arrhenius plots of the temperature-dependent photoluminescence spectra revealed the enhancements in radiative recombination. The activation energy was shown to be 130 meV for the InGaN/GaN MQW structures with silicon delta doping. It was 110 meV for the undoped samples. The increase in the thermal activation energy was attributed to the supply of electrons from the silicon delta doping barrier region into the InGaN quantum wells. The hole-capturing by higher energy barrier in the valence band was also increased. Silicon delta doping suppresses carrier leakage by increasing exciton confinement, and therefore improves the quantum efficiency.",
keywords = "Gallium nitride, Multiple quantum well, Photoluminescenc, Silicon doping",
author = "Wu, {G. M.} and Chung, {T. J.} and Nee, {T. E.} and Wang, {J. C.} and Lu, {H. C.}",
year = "2008",
doi = "10.1109/NEMS.2008.4484403",
language = "英语",
isbn = "9781424419081",
series = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS",
pages = "596--599",
booktitle = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008",
note = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 ; Conference date: 06-01-2008 Through 09-01-2008",
}