Integrated current detector for high voltage power switches using LDMOS transistors

Chin Hsia

doi:10.1109/IS3C.2016.40

Integrated current detector for high voltage power switches using LDMOS transistors

Chin Hsia^*

^*Corresponding author for this work

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An integrated current detector designed to protect high voltage LDMOS power switches is presented in this paper. The proposed detector monitors the current of power switches by a mirrored ratio current. Power switches can be automatically turned off once the mirrored current exceeds the predetermined triggered value and thereby protect power switches from being damages. The response time of current detector determines the maximum operation frequency of the driving signal to the power switch. Both simulated and measurement results show that the designed current detector with an integrated LDMOS switch can work higher than 1 MHz switching frequency with maximum 1A current driving capability.

Original language	English
Title of host publication	Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	116-119
Number of pages	4
ISBN (Electronic)	9781509030712
DOIs	https://doi.org/10.1109/IS3C.2016.40
State	Published - 16 08 2016
Externally published	Yes
Event	2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016 - Xi'an, China Duration: 04 07 2016 → 06 07 2016

Publication series

Name	Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016

Conference

Conference	2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016
Country/Territory	China
City	Xi'an
Period	04/07/16 → 06/07/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

High voltage LDMOS
On-chip current detector
Power electronics

Access to Document

10.1109/IS3C.2016.40

Cite this

Hsia, C. (2016). Integrated current detector for high voltage power switches using LDMOS transistors. In Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016 (pp. 116-119). Article 7545150 (Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IS3C.2016.40

@inproceedings{05e8b955a1d043a0a58dbbfe5e14bcec,

title = "Integrated current detector for high voltage power switches using LDMOS transistors",

abstract = "An integrated current detector designed to protect high voltage LDMOS power switches is presented in this paper. The proposed detector monitors the current of power switches by a mirrored ratio current. Power switches can be automatically turned off once the mirrored current exceeds the predetermined triggered value and thereby protect power switches from being damages. The response time of current detector determines the maximum operation frequency of the driving signal to the power switch. Both simulated and measurement results show that the designed current detector with an integrated LDMOS switch can work higher than 1 MHz switching frequency with maximum 1A current driving capability.",

keywords = "High voltage LDMOS, On-chip current detector, Power electronics",

author = "Chin Hsia",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016 ; Conference date: 04-07-2016 Through 06-07-2016",

year = "2016",

month = aug,

day = "16",

doi = "10.1109/IS3C.2016.40",

language = "英语",

series = "Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "116--119",

booktitle = "Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016",

address = "美国",

}

Hsia, C 2016, Integrated current detector for high voltage power switches using LDMOS transistors. in Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016., 7545150, Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016, Institute of Electrical and Electronics Engineers Inc., pp. 116-119, 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016, Xi'an, China, 04/07/16. https://doi.org/10.1109/IS3C.2016.40

Integrated current detector for high voltage power switches using LDMOS transistors. / Hsia, Chin.
Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 116-119 7545150 (Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2016/8/16

Y1 - 2016/8/16

N2 - An integrated current detector designed to protect high voltage LDMOS power switches is presented in this paper. The proposed detector monitors the current of power switches by a mirrored ratio current. Power switches can be automatically turned off once the mirrored current exceeds the predetermined triggered value and thereby protect power switches from being damages. The response time of current detector determines the maximum operation frequency of the driving signal to the power switch. Both simulated and measurement results show that the designed current detector with an integrated LDMOS switch can work higher than 1 MHz switching frequency with maximum 1A current driving capability.

AB - An integrated current detector designed to protect high voltage LDMOS power switches is presented in this paper. The proposed detector monitors the current of power switches by a mirrored ratio current. Power switches can be automatically turned off once the mirrored current exceeds the predetermined triggered value and thereby protect power switches from being damages. The response time of current detector determines the maximum operation frequency of the driving signal to the power switch. Both simulated and measurement results show that the designed current detector with an integrated LDMOS switch can work higher than 1 MHz switching frequency with maximum 1A current driving capability.

KW - High voltage LDMOS

KW - On-chip current detector

KW - Power electronics

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DO - 10.1109/IS3C.2016.40

M3 - 会议稿件

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BT - Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016

Y2 - 4 July 2016 through 6 July 2016

ER -

Hsia C. Integrated current detector for high voltage power switches using LDMOS transistors. In Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 116-119. 7545150. (Proceedings - 2016 IEEE International Symposium on Computer, Consumer and Control, IS3C 2016). doi: 10.1109/IS3C.2016.40

Integrated current detector for high voltage power switches using LDMOS transistors

Abstract

Publication series

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Bibliographical note

Keywords

Access to Document

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