Integrated the inductors on ultra-thin Si substrate to improve the RF performance for low-noise amplifier applications

This article presents the Q-factor improvement as high as 31% of 0.8 nH spiral inductors of 90-lm-thick silicon substrate on plastic. The improvement of Q-factor is due to reducing the parasitic effect from Si substrate. The loss mechanisms of parasitic effect of inductor have been studied by thinned down the Si substrate to 90 lm and transfer to plastic. The inductance of the inductors before and after thinned down to 90 lm Si substrates mounted on plastic are almost identical for radio frequency circuit design. A low 0.2 dB minimum noise figure (NFmin) of low-noise amplifier circuit with 90 lm Si substrate on plastic was obtained due to the improvement of high Q-factor inductors in the first stage for radio frequency identification applications.