Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

X. R. Yu; M. H. Chuang; S. W. Chang; W. H. Chang; T. C. Hong; C. H. Chiang; W. H. Lu; C. Y. Yang; W. J. Chen; J. H. Lin; P. H. Wu; T. C. Sun; S. Kola; Y. S. Yang; Yun Da; P. J. Sung; C. T. Wu; T. C. Cho; G. L. Luo; K. H. Kao; M. H. Chiang; W. C.Y. Ma; C. J. Su; T. S. Chao; T. Maeda; S. Samukawa; Y. Li; Y. J. Lee; W. F. Wu; J. H. Tarng; Y. H. Wang

doi:10.1109/IEDM45625.2022.10019507

Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

X. R. Yu^*, M. H. Chuang, S. W. Chang, W. H. Chang, T. C. Hong, C. H. Chiang, W. H. Lu, C. Y. Yang, W. J. Chen, J. H. Lin, P. H. Wu, T. C. Sun, S. Kola, Y. S. Yang, Yun Da, P. J. Sung, C. T. Wu, T. C. Cho, G. L. Luo, K. H. KaoM. H. Chiang, W. C.Y. Ma, C. J. Su, T. S. Chao, T. Maeda, S. Samukawa, Y. Li, Y. J. Lee, W. F. Wu, J. H. Tarng, Y. H. Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

In this work, we propose an advanced 3-D heterogeneous 6T SRAM with a newly designed hetero-integration method. CFET inverters and IGZO pass gates are vertically stacked within a 2T footprint area. The Low-Temperature Hetero-Layers Bonding Technique (LT-HBT) process is utilized successfully to fabricate single crystalline heterogeneous Double Layer Transferred (DLT) Ge/2Si CFET-OI on an 8-inch full wafer. Furthermore, an IGZO nFET is deposited and treated as a pass gate (PG) to realize a 6T SRAM operation. The hetero-integration of IGZO PG and self-align DLT Ge/2Si CFET inverters showed improved Read Static Noise Margin (RSNM) and stand-by leakage power. The state-of-the-art 3-D heterogeneous 6T SRAM leads to 42% area reduction.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2051-2054
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019507
State	Published - 2022
Externally published	Yes
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 03 12 2022 → 07 12 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	03/12/22 → 07/12/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Access to Document

10.1109/IEDM45625.2022.10019507

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Yu, X. R., Chuang, M. H., Chang, S. W., Chang, W. H., Hong, T. C., Chiang, C. H., Lu, W. H., Yang, C. Y., Chen, W. J., Lin, J. H., Wu, P. H., Sun, T. C., Kola, S., Yang, Y. S., Da, Y., Sung, P. J., Wu, C. T., Cho, T. C., Luo, G. L., ... Wang, Y. H. (2022). Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 2051-2054). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019507

Yu, X. R. ; Chuang, M. H. ; Chang, S. W. et al. / Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size. 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 2051-2054 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{ca3b00959ed14624a30ba5e080fa7ce5,

title = "Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42\% Reduced Cell Size",

abstract = "In this work, we propose an advanced 3-D heterogeneous 6T SRAM with a newly designed hetero-integration method. CFET inverters and IGZO pass gates are vertically stacked within a 2T footprint area. The Low-Temperature Hetero-Layers Bonding Technique (LT-HBT) process is utilized successfully to fabricate single crystalline heterogeneous Double Layer Transferred (DLT) Ge/2Si CFET-OI on an 8-inch full wafer. Furthermore, an IGZO nFET is deposited and treated as a pass gate (PG) to realize a 6T SRAM operation. The hetero-integration of IGZO PG and self-align DLT Ge/2Si CFET inverters showed improved Read Static Noise Margin (RSNM) and stand-by leakage power. The state-of-the-art 3-D heterogeneous 6T SRAM leads to 42\% area reduction.",

author = "Yu, \{X. R.\} and Chuang, \{M. H.\} and Chang, \{S. W.\} and Chang, \{W. H.\} and Hong, \{T. C.\} and Chiang, \{C. H.\} and Lu, \{W. H.\} and Yang, \{C. Y.\} and Chen, \{W. J.\} and Lin, \{J. H.\} and Wu, \{P. H.\} and Sun, \{T. C.\} and S. Kola and Yang, \{Y. S.\} and Yun Da and Sung, \{P. J.\} and Wu, \{C. T.\} and Cho, \{T. C.\} and Luo, \{G. L.\} and Kao, \{K. H.\} and Chiang, \{M. H.\} and Ma, \{W. C.Y.\} and Su, \{C. J.\} and Chao, \{T. S.\} and T. Maeda and S. Samukawa and Y. Li and Lee, \{Y. J.\} and Wu, \{W. F.\} and Tarng, \{J. H.\} and Wang, \{Y. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019507",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2051--2054",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美国",

}

Yu, XR, Chuang, MH, Chang, SW, Chang, WH, Hong, TC, Chiang, CH, Lu, WH, Yang, CY, Chen, WJ, Lin, JH, Wu, PH, Sun, TC, Kola, S, Yang, YS, Da, Y, Sung, PJ, Wu, CT, Cho, TC, Luo, GL, Kao, KH, Chiang, MH, Ma, WCY, Su, CJ, Chao, TS, Maeda, T, Samukawa, S, Li, Y, Lee, YJ, Wu, WF, Tarng, JH & Wang, YH 2022, Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 2051-2054, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 03/12/22. https://doi.org/10.1109/IEDM45625.2022.10019507

Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size. / Yu, X. R.; Chuang, M. H.; Chang, S. W. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 2051-2054 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

AU - Yu, X. R.

AU - Chuang, M. H.

AU - Chang, S. W.

AU - Chang, W. H.

AU - Hong, T. C.

AU - Chiang, C. H.

AU - Lu, W. H.

AU - Yang, C. Y.

AU - Chen, W. J.

AU - Lin, J. H.

AU - Wu, P. H.

AU - Sun, T. C.

AU - Kola, S.

AU - Yang, Y. S.

AU - Da, Yun

AU - Sung, P. J.

AU - Wu, C. T.

AU - Cho, T. C.

AU - Luo, G. L.

AU - Kao, K. H.

AU - Chiang, M. H.

AU - Ma, W. C.Y.

AU - Su, C. J.

AU - Chao, T. S.

AU - Maeda, T.

AU - Samukawa, S.

AU - Li, Y.

AU - Lee, Y. J.

AU - Wu, W. F.

AU - Tarng, J. H.

AU - Wang, Y. H.

PY - 2022

Y1 - 2022

N2 - In this work, we propose an advanced 3-D heterogeneous 6T SRAM with a newly designed hetero-integration method. CFET inverters and IGZO pass gates are vertically stacked within a 2T footprint area. The Low-Temperature Hetero-Layers Bonding Technique (LT-HBT) process is utilized successfully to fabricate single crystalline heterogeneous Double Layer Transferred (DLT) Ge/2Si CFET-OI on an 8-inch full wafer. Furthermore, an IGZO nFET is deposited and treated as a pass gate (PG) to realize a 6T SRAM operation. The hetero-integration of IGZO PG and self-align DLT Ge/2Si CFET inverters showed improved Read Static Noise Margin (RSNM) and stand-by leakage power. The state-of-the-art 3-D heterogeneous 6T SRAM leads to 42% area reduction.

AB - In this work, we propose an advanced 3-D heterogeneous 6T SRAM with a newly designed hetero-integration method. CFET inverters and IGZO pass gates are vertically stacked within a 2T footprint area. The Low-Temperature Hetero-Layers Bonding Technique (LT-HBT) process is utilized successfully to fabricate single crystalline heterogeneous Double Layer Transferred (DLT) Ge/2Si CFET-OI on an 8-inch full wafer. Furthermore, an IGZO nFET is deposited and treated as a pass gate (PG) to realize a 6T SRAM operation. The hetero-integration of IGZO PG and self-align DLT Ge/2Si CFET inverters showed improved Read Static Noise Margin (RSNM) and stand-by leakage power. The state-of-the-art 3-D heterogeneous 6T SRAM leads to 42% area reduction.

UR - https://www.scopus.com/pages/publications/85147533584

U2 - 10.1109/IEDM45625.2022.10019507

DO - 10.1109/IEDM45625.2022.10019507

M3 - 会议稿件

AN - SCOPUS:85147533584

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 2051

EP - 2054

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Yu XR, Chuang MH, Chang SW, Chang WH, Hong TC, Chiang CH et al. Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 2051-2054. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019507

Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

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