Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters

Pao Nan Lee; Yu Chang Hsieh; Hung Lun Lo; Chang Ho Li; Fan Hsiu Huang; James Lin; Wei Chu Hsu; Chen Chao Wang

doi:10.1109/ECTC51906.2022.00211

Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters

Pao Nan Lee^*, Yu Chang Hsieh, Hung Lun Lo, Chang Ho Li, Fan Hsiu Huang, James Lin, Wei Chu Hsu, Chen Chao Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

5G communication has been widely implemented since year 2020, especially for FR1 sub-6GHz range. Band n77, n78 and n79 are three critical bands in the 5G FR1 because of higher frequency and much wider bandwidth - This also brings new challenge on filter design. In this work, we propose a new structure which combines OSAT Fan-Out RDL inductors and foundry MIM capacitors to enhance filter performance. A 800 MHz LPF test vehicle indicates this new structure is able to sustain 38 dBm at least, which is better than 36 dBm in the conventional IPD. Band pass filters for band n77 and n79 are designed and fabricated by this new structure as well. The insertion loss is about 1.44 dB for band n77 and 2.07 dB for band n79; The maximum sustainable input power is 34 dBm for both n77 filter and n79 filter. Besides single filter, Fan-Out RDL can replace conventional coreless packaging substrate to realize a thinner RF FEM.

Original language	English
Title of host publication	Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1310-1315
Number of pages	6
ISBN (Electronic)	9781665479431
DOIs	https://doi.org/10.1109/ECTC51906.2022.00211
State	Published - 2022
Externally published	Yes
Event	72nd IEEE Electronic Components and Technology Conference, ECTC 2022 - San Diego, United States Duration: 31 05 2022 → 03 06 2022

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2022-May
ISSN (Print)	0569-5503

Conference

Conference	72nd IEEE Electronic Components and Technology Conference, ECTC 2022
Country/Territory	United States
City	San Diego
Period	31/05/22 → 03/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

5G
Fan-Out
IPD
SiP
filter
n77
n79

Access to Document

10.1109/ECTC51906.2022.00211

Cite this

Lee, P. N., Hsieh, Y. C., Lo, H. L., Li, C. H., Huang, F. H., Lin, J., Hsu, W. C., & Wang, C. C. (2022). Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters. In Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022 (pp. 1310-1315). (Proceedings - Electronic Components and Technology Conference; Vol. 2022-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC51906.2022.00211

Lee, Pao Nan ; Hsieh, Yu Chang ; Lo, Hung Lun et al. / Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters. Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 1310-1315 (Proceedings - Electronic Components and Technology Conference).

@inproceedings{7cd7d912ff2d4bec92099ce6fa1cb58d,

title = "Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters",

abstract = "5G communication has been widely implemented since year 2020, especially for FR1 sub-6GHz range. Band n77, n78 and n79 are three critical bands in the 5G FR1 because of higher frequency and much wider bandwidth - This also brings new challenge on filter design. In this work, we propose a new structure which combines OSAT Fan-Out RDL inductors and foundry MIM capacitors to enhance filter performance. A 800 MHz LPF test vehicle indicates this new structure is able to sustain 38 dBm at least, which is better than 36 dBm in the conventional IPD. Band pass filters for band n77 and n79 are designed and fabricated by this new structure as well. The insertion loss is about 1.44 dB for band n77 and 2.07 dB for band n79; The maximum sustainable input power is 34 dBm for both n77 filter and n79 filter. Besides single filter, Fan-Out RDL can replace conventional coreless packaging substrate to realize a thinner RF FEM.",

keywords = "5G, Fan-Out, IPD, SiP, filter, n77, n79",

author = "Lee, {Pao Nan} and Hsieh, {Yu Chang} and Lo, {Hung Lun} and Li, {Chang Ho} and Huang, {Fan Hsiu} and James Lin and Hsu, {Wei Chu} and Wang, {Chen Chao}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 72nd IEEE Electronic Components and Technology Conference, ECTC 2022 ; Conference date: 31-05-2022 Through 03-06-2022",

year = "2022",

doi = "10.1109/ECTC51906.2022.00211",

language = "英语",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1310--1315",

booktitle = "Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022",

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Lee, PN, Hsieh, YC, Lo, HL, Li, CH, Huang, FH, Lin, J, Hsu, WC & Wang, CC 2022, Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters. in Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022. Proceedings - Electronic Components and Technology Conference, vol. 2022-May, Institute of Electrical and Electronics Engineers Inc., pp. 1310-1315, 72nd IEEE Electronic Components and Technology Conference, ECTC 2022, San Diego, United States, 31/05/22. https://doi.org/10.1109/ECTC51906.2022.00211

Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters. / Lee, Pao Nan; Hsieh, Yu Chang; Lo, Hung Lun et al.
Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1310-1315 (Proceedings - Electronic Components and Technology Conference; Vol. 2022-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Pao Nan

AU - Hsieh, Yu Chang

AU - Lo, Hung Lun

AU - Li, Chang Ho

AU - Huang, Fan Hsiu

AU - Lin, James

AU - Hsu, Wei Chu

AU - Wang, Chen Chao

PY - 2022

Y1 - 2022

N2 - 5G communication has been widely implemented since year 2020, especially for FR1 sub-6GHz range. Band n77, n78 and n79 are three critical bands in the 5G FR1 because of higher frequency and much wider bandwidth - This also brings new challenge on filter design. In this work, we propose a new structure which combines OSAT Fan-Out RDL inductors and foundry MIM capacitors to enhance filter performance. A 800 MHz LPF test vehicle indicates this new structure is able to sustain 38 dBm at least, which is better than 36 dBm in the conventional IPD. Band pass filters for band n77 and n79 are designed and fabricated by this new structure as well. The insertion loss is about 1.44 dB for band n77 and 2.07 dB for band n79; The maximum sustainable input power is 34 dBm for both n77 filter and n79 filter. Besides single filter, Fan-Out RDL can replace conventional coreless packaging substrate to realize a thinner RF FEM.

AB - 5G communication has been widely implemented since year 2020, especially for FR1 sub-6GHz range. Band n77, n78 and n79 are three critical bands in the 5G FR1 because of higher frequency and much wider bandwidth - This also brings new challenge on filter design. In this work, we propose a new structure which combines OSAT Fan-Out RDL inductors and foundry MIM capacitors to enhance filter performance. A 800 MHz LPF test vehicle indicates this new structure is able to sustain 38 dBm at least, which is better than 36 dBm in the conventional IPD. Band pass filters for band n77 and n79 are designed and fabricated by this new structure as well. The insertion loss is about 1.44 dB for band n77 and 2.07 dB for band n79; The maximum sustainable input power is 34 dBm for both n77 filter and n79 filter. Besides single filter, Fan-Out RDL can replace conventional coreless packaging substrate to realize a thinner RF FEM.

KW - 5G

KW - Fan-Out

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KW - SiP

KW - filter

KW - n77

KW - n79

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M3 - 会议稿件

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T3 - Proceedings - Electronic Components and Technology Conference

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EP - 1315

BT - Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 72nd IEEE Electronic Components and Technology Conference, ECTC 2022

Y2 - 31 May 2022 through 3 June 2022

ER -

Lee PN, Hsieh YC, Lo HL, Li CH, Huang FH, Lin J et al. Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters. In Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1310-1315. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC51906.2022.00211

Integration of Foundry MIM Capacitor and OSAT Fan-Out RDL for High Performance RF Filters

Abstract

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Keywords

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