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Intensive measures of luminescence in GaN/InGaN heterostructures
Jui Ju Hsiao
, Yi Jen Huang
, Hung Ing Chen
, Joe Air Jiang
, Jen Cheng Wang
, Ya Fen Wu
,
Tzer En Nee
Graduate Institute of Electro-Optical Engineering
Chang Gung University
National Taiwan University
Ming Chi University of Technology
Chang Gung Memorial Hospital
Research output
:
Contribution to journal
›
Journal Article
›
peer-review
3
Scopus citations
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Engineering
Heterostructures
100%
Measurer
100%
Junction Temperature
100%
Debye Temperature
80%
Semiconductor
40%
Photons
40%
Couplings
40%
Quantum Efficiency
40%
Thermodynamics
40%
Characteristics
20%
Properties
20%
Temperature
20%
Measurement
20%
Microstructure
20%
Efficiency
20%
Enhancement
20%
Thermal Energy
20%
Obtains
20%
Electric Potential
20%
Indium Content
20%
Quantum State
20%
Energetics
20%
State Variable
20%
Nanosystems
20%
Localisation
20%
Spectral Range
20%
Quantum Well
20%
Metrics
20%
Quantum Yield
20%
Interlayer
20%
Extensive Property
20%
Phonon Interaction
20%
Equilibrium State
20%
Intensive Property
20%
Chemistry
Reaction Temperature
100%
Luminiscence Type
100%
Electroluminescence
100%
Photoluminescence
83%
Electron Particle
66%
Phonon
66%
Debye Temperature
66%
Thermodynamics
33%
Procedure
33%
Semiconductor
33%
Indium
33%
Phonons
33%
Voltage
16%
Structure
16%
Phase Composition
16%
Analytical Method
16%
Equilibrium
16%
Optical Property
16%
Energy
16%
Strength
16%
Spectra
16%
Heat
16%
Microstructure
16%
Photoluminescence Spectroscopy
16%
Energetics
16%
Luminescence Quantum Yield
16%
Nonradiative Transition
16%
Physics
Photoluminescence
100%
Temperature
100%
Luminescence
100%
Electroluminescence
100%
Electrons
66%
Specific Heat
66%
Thermodynamics
33%
Independent Variables
33%
Semiconductor
33%
Indium
33%
Photons
33%
Spectra
16%
Spectrometer
16%
Spectroscopy
16%
Position (Location)
16%
Electric Potential
16%
Heat
16%
Transferring
16%
Optical Properties
16%
Emission
16%
near Infrared
16%
Multiple Quantum Well
16%
Material Science
Temperature
100%
Heterojunction
100%
Luminescence
100%
Photoluminescence
60%
Electroluminescence
60%
Semiconductor Material
20%
Microstructure
10%
Mechanical Strength
10%
Optical Property
10%