Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates

S. K. Samanta; S. Chatterjee; S. Maikap; L. K. Bera; H. D. Banerjee; C. K. Maiti

doi:10.1063/1.1540224

Interface properties and reliability of ultrathin oxynitride films grown on strained Si_1-xGe_x substrates

S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee, C. K. Maiti^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

The study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N₂O ambient and annealed in N₂ had excellent electrical properties.

Original language	English
Pages (from-to)	2464-2471
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1540224
State	Published - 01 03 2003
Externally published	Yes

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abstract = "The study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N2O ambient and annealed in N2 had excellent electrical properties.",

author = "Samanta, {S. K.} and S. Chatterjee and S. Maikap and Bera, {L. K.} and Banerjee, {H. D.} and Maiti, {C. K.}",

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AU - Samanta, S. K.

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AU - Bera, L. K.

AU - Banerjee, H. D.

AU - Maiti, C. K.

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AB - The study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N2O ambient and annealed in N2 had excellent electrical properties.

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M3 - 文章

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Interface properties and reliability of ultrathin oxynitride films grown on strained Si_1-xGe_x substrates

Abstract

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