Interfacial Reaction Suppression of Gate First CMOS HfO2 Achieve Zero Interfacial Layer by Pre-CF4 Plasma Passivation

Huai-Hsien Chiu, Jer-Chyi Wang, Chao-Sung Lai, Woei-Cherng Wu, Tien-Sheng Chao

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2009
Event	2009 International Electron Devices and Materials Symposia - Taoyuan, Taiwan Duration: 19 11 2009 → 20 11 2009

Conference	2009 International Electron Devices and Materials Symposia
Period	19/11/09 → 20/11/09

Cite this

@conference{2a9cde642e854ebc9ddd62e1af883c5f,

title = "Interfacial Reaction Suppression of Gate First CMOS HfO2 Achieve Zero Interfacial Layer by Pre-CF4 Plasma Passivation",

author = "Huai-Hsien Chiu and Jer-Chyi Wang and Chao-Sung Lai and Woei-Cherng Wu and Tien-Sheng Chao",

year = "2009",

language = "American English",

note = "2009 International Electron Devices and Materials Symposia ; Conference date: 19-11-2009 Through 20-11-2009",

}

TY - CONF

T1 - Interfacial Reaction Suppression of Gate First CMOS HfO2 Achieve Zero Interfacial Layer by Pre-CF4 Plasma Passivation

AU - Chiu, Huai-Hsien

AU - Wang, Jer-Chyi

AU - Lai, Chao-Sung

AU - Wu, Woei-Cherng

AU - Chao, Tien-Sheng

PY - 2009

Y1 - 2009

M3 - Proceeding

T2 - 2009 International Electron Devices and Materials Symposia

Y2 - 19 November 2009 through 20 November 2009

ER -