Intersublevel relaxation dependence of carrier hopping in self-organized InAs quantum dot heterostructures

Y. F. Wu; H. T. Shen; Y. H. Lin; C. C. Cheng; R. M. Lin; T. E. Nee; N. T. Yen

doi:10.4028/www.scientific.net/ssp.99-100.41

Intersublevel relaxation dependence of carrier hopping in self-organized InAs quantum dot heterostructures

Y. F. Wu^*, H. T. Shen, Y. H. Lin, C. C. Cheng, R. M. Lin, T. E. Nee, N. T. Yen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The temperature dependence of the photoluminescence (PL) emission spectra of self-organized InAs/GaAs quantum dots (QDs) grown under different growth conditions in the range 20-300K has been investigated. Three InAs QD samples were grown on (100) 2°-tilted toward (111)A Si-doped GaAs substrates by metal-organic chemical vapour epitaxy (MOVPE), with various size uniformities and dot densities. Observing the measured PL spectra at 20K, the differences caused by size uniformities among the three samples were obvious. The PL spectra were simulated with rate equations, taking into account the carrier relaxation between the first excited state and the ground state. Interestingly, the calculated relaxation lifetimes at 20K were 198ps, 139ps and 54ps for the samples. The temperature dependent PL spectra were also simulated using the same model. Based on the calculated values of temperature dependent relaxation lifetimes, the differences in changes with temperature among the three samples are discussed. The results are consistent with the thermal redistribution effect.

Original language	English
Pages (from-to)	41-48
Number of pages	8
Journal	Solid State Phenomena
Volume	99-100
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.99-100.41
State	Published - 2004
Event	Proceedings of Symposium F European Materials Research Society Fall Meeting 2003 - Warsaw, Poland Duration: 15 09 2003 → 19 09 2003

Keywords

Carrier relaxation lifetime
InAs quantum dot
Photoluminescence

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@article{169d1ea3a2484458ad50afb55d13dfe2,

title = "Intersublevel relaxation dependence of carrier hopping in self-organized InAs quantum dot heterostructures",

abstract = "The temperature dependence of the photoluminescence (PL) emission spectra of self-organized InAs/GaAs quantum dots (QDs) grown under different growth conditions in the range 20-300K has been investigated. Three InAs QD samples were grown on (100) 2°-tilted toward (111)A Si-doped GaAs substrates by metal-organic chemical vapour epitaxy (MOVPE), with various size uniformities and dot densities. Observing the measured PL spectra at 20K, the differences caused by size uniformities among the three samples were obvious. The PL spectra were simulated with rate equations, taking into account the carrier relaxation between the first excited state and the ground state. Interestingly, the calculated relaxation lifetimes at 20K were 198ps, 139ps and 54ps for the samples. The temperature dependent PL spectra were also simulated using the same model. Based on the calculated values of temperature dependent relaxation lifetimes, the differences in changes with temperature among the three samples are discussed. The results are consistent with the thermal redistribution effect.",

keywords = "Carrier relaxation lifetime, InAs quantum dot, Photoluminescence",

author = "Wu, {Y. F.} and Shen, {H. T.} and Lin, {Y. H.} and Cheng, {C. C.} and Lin, {R. M.} and Nee, {T. E.} and Yen, {N. T.}",

year = "2004",

doi = "10.4028/www.scientific.net/ssp.99-100.41",

language = "英语",

volume = "99-100",

pages = "41--48",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Trans Tech Publications Ltd",

note = "Proceedings of Symposium F European Materials Research Society Fall Meeting 2003 ; Conference date: 15-09-2003 Through 19-09-2003",

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TY - JOUR

T1 - Intersublevel relaxation dependence of carrier hopping in self-organized InAs quantum dot heterostructures

AU - Wu, Y. F.

AU - Shen, H. T.

AU - Lin, Y. H.

AU - Cheng, C. C.

AU - Lin, R. M.

AU - Nee, T. E.

AU - Yen, N. T.

PY - 2004

Y1 - 2004

N2 - The temperature dependence of the photoluminescence (PL) emission spectra of self-organized InAs/GaAs quantum dots (QDs) grown under different growth conditions in the range 20-300K has been investigated. Three InAs QD samples were grown on (100) 2°-tilted toward (111)A Si-doped GaAs substrates by metal-organic chemical vapour epitaxy (MOVPE), with various size uniformities and dot densities. Observing the measured PL spectra at 20K, the differences caused by size uniformities among the three samples were obvious. The PL spectra were simulated with rate equations, taking into account the carrier relaxation between the first excited state and the ground state. Interestingly, the calculated relaxation lifetimes at 20K were 198ps, 139ps and 54ps for the samples. The temperature dependent PL spectra were also simulated using the same model. Based on the calculated values of temperature dependent relaxation lifetimes, the differences in changes with temperature among the three samples are discussed. The results are consistent with the thermal redistribution effect.

AB - The temperature dependence of the photoluminescence (PL) emission spectra of self-organized InAs/GaAs quantum dots (QDs) grown under different growth conditions in the range 20-300K has been investigated. Three InAs QD samples were grown on (100) 2°-tilted toward (111)A Si-doped GaAs substrates by metal-organic chemical vapour epitaxy (MOVPE), with various size uniformities and dot densities. Observing the measured PL spectra at 20K, the differences caused by size uniformities among the three samples were obvious. The PL spectra were simulated with rate equations, taking into account the carrier relaxation between the first excited state and the ground state. Interestingly, the calculated relaxation lifetimes at 20K were 198ps, 139ps and 54ps for the samples. The temperature dependent PL spectra were also simulated using the same model. Based on the calculated values of temperature dependent relaxation lifetimes, the differences in changes with temperature among the three samples are discussed. The results are consistent with the thermal redistribution effect.

KW - Carrier relaxation lifetime

KW - InAs quantum dot

KW - Photoluminescence

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U2 - 10.4028/www.scientific.net/ssp.99-100.41

DO - 10.4028/www.scientific.net/ssp.99-100.41

M3 - 会议文章

AN - SCOPUS:8644243954

SN - 1012-0394

VL - 99-100

SP - 41

EP - 48

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - Proceedings of Symposium F European Materials Research Society Fall Meeting 2003

Y2 - 15 September 2003 through 19 September 2003

ER -

Intersublevel relaxation dependence of carrier hopping in self-organized InAs quantum dot heterostructures

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Keywords

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