Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures

Jiunn Chyi Lee*, Yeu Jent Hu, Ya Fen Wu, Tzer En Nee, Jen Cheng Wang, Jia Hui Fang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages934-937
Number of pages4
DOIs
StatePublished - 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: 02 08 200705 08 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/TerritoryChina
CityHong Kong
Period02/08/0705/08/07

Keywords

  • Intersublevel relaxation lifetime
  • Quantum dots
  • Rate equations
  • Size uniformity

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