Investigate the Double Peaks in Main Emission of UVB LEDs

Tsung-Yen Liu; Shih-Ming Huang; Mu-Jen Lai; Rui-Sen Liu; Chieh-Hsiung Kuan; Ray-Ming Lin

doi:10.21203/rs.3.rs-680585

Investigate the Double Peaks in Main Emission of UVB LEDs

Tsung-Yen Liu, Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Chieh-Hsiung Kuan, Ray-Ming Lin

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

<div data-language="eng" data-ev-field="abstract">In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm.<br/></div> © 2021, CC BY.

Original language	American English
Journal	Research Square
DOIs	https://doi.org/10.21203/rs.3.rs-680585
State	Published - 2021

Keywords

Aluminum alloys
Aluminum gallium nitride
Gallium alloys
III-V semiconductors
Light emitting diodes
Semiconductor alloys
Semiconductor quantum wells
Condition
Doping profiles
Double peak
Electron overflow
Exciton emission
Light-emitting diode
Lightemitting diode
P-layer structures
Parasitic emissions
Ultraviolet

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10.21203/rs.3.rs-680585

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@article{7d9236f598434c148867b0f2dd495153,

title = "Investigate the Double Peaks in Main Emission of UVB LEDs",

abstract = "In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm. © 2021, CC BY.",

keywords = "Aluminum alloys, Aluminum gallium nitride, Gallium alloys, III-V semiconductors, Light emitting diodes, Semiconductor alloys, Semiconductor quantum wells, Condition, Doping profiles, Double peak, Electron overflow, Exciton emission, Light-emitting diode, Lightemitting diode, P-layer structures, Parasitic emissions, Ultraviolet",

author = "Tsung-Yen Liu and Shih-Ming Huang and Mu-Jen Lai and Rui-Sen Liu and Chieh-Hsiung Kuan and Ray-Ming Lin",

year = "2021",

doi = "10.21203/rs.3.rs-680585",

language = "American English",

journal = "Research Square",

issn = "2693-5015",

}

TY - JOUR

T1 - Investigate the Double Peaks in Main Emission of UVB LEDs

AU - Liu, Tsung-Yen

AU - Huang, Shih-Ming

AU - Lai, Mu-Jen

AU - Liu, Rui-Sen

AU - Kuan, Chieh-Hsiung

AU - Lin, Ray-Ming

PY - 2021

Y1 - 2021

N2 - In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm. © 2021, CC BY.

AB - In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm. © 2021, CC BY.

KW - Aluminum alloys

KW - Aluminum gallium nitride

KW - Gallium alloys

KW - III-V semiconductors

KW - Light emitting diodes

KW - Semiconductor alloys

KW - Semiconductor quantum wells

KW - Condition

KW - Doping profiles

KW - Double peak

KW - Electron overflow

KW - Exciton emission

KW - Light-emitting diode

KW - Lightemitting diode

KW - P-layer structures

KW - Parasitic emissions

KW - Ultraviolet

U2 - 10.21203/rs.3.rs-680585

DO - 10.21203/rs.3.rs-680585

M3 - Journal Article

SN - 2693-5015

JO - Research Square

JF - Research Square

ER -

Investigate the Double Peaks in Main Emission of UVB LEDs

Abstract

Keywords

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