Abstract
<div data-language="eng" data-ev-field="abstract">In this study we suppressed the parasitic emission caused by electron overflow found in typical UVB light-emitting diodes (LEDs). Furthermore, modulation of the p-layer structure and doping profile allowed us to decrease the relaxation time of the holes to reach conditions of quasi-charge neutrality in the UVB quantum well. Our UVB LED (sample A) exhibited a clear exciton emission, with its peak near 306 nm and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of a thermal energy effect. At temperatures of up to 363 K, sample A displayed the exciton emission. Our corresponding UVC LED (sample B) exhibited only a Gaussian peak emission at a wavelength of approximately 272 nm.<br/></div> © 2021, CC BY.
| Original language | American English |
|---|---|
| Journal | Research Square |
| DOIs | |
| State | Published - 2021 |
Keywords
- Aluminum alloys
- Aluminum gallium nitride
- Gallium alloys
- III-V semiconductors
- Light emitting diodes
- Semiconductor alloys
- Semiconductor quantum wells
- Condition
- Doping profiles
- Double peak
- Electron overflow
- Exciton emission
- Light-emitting diode
- Lightemitting diode
- P-layer structures
- Parasitic emissions
- Ultraviolet
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