Investigation and comparison of the gan-based light-emitting diodes grown on high aspect ratio nano-cone and general micro-cone patterned sapphire substrate

Jhih Kai Huang, Da Wei Lin, Min Hsiung Shih, Kang Yuan Lee, Jyun Rong Chen, Hung Weng Huang, Shou Yi Kuo, Chung Hsiang Lin, Po Tsung Lee, Gou Chung Chi, Hao Chung Kuo

Research output: Contribution to journalJournal Article peer-review

16 Scopus citations

Abstract

In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.

Original languageEnglish
Article number6547174
Pages (from-to)947-952
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number12
DOIs
StatePublished - 12 2013

Keywords

  • GaN
  • light-emitting diodes (LEDs)
  • nano-imprint lithography (NIL)
  • nano-patterned sapphire substrate (NPSS)

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