Investigation of chemical bath deposition of CdO thin films using three different complexing agents

Hani Khallaf; Chia Ta Chen; Liann Be Chang; Oleg Lupan; Aniruddha Dutta; Helge Heinrich; A. Shenouda; Lee Chow

doi:10.1016/j.apsusc.2011.04.060

Investigation of chemical bath deposition of CdO thin films using three different complexing agents

Hani Khallaf, Chia Ta Chen, Liann Be Chang, Oleg Lupan, Aniruddha Dutta, Helge Heinrich, A. Shenouda, Lee Chow^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

103 Scopus citations

Abstract

Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO ₄ is used as Cd precursor, while H ₂ O ₂ is used as an oxidation agent. As-grown films are mainly cubic CdO ₂ , with some Cd(OH) ₂ as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 ²⁰ cm ^-3 and a resistivity as low as 1.04 × 10 ^-2 Ω-cm are obtained.

Original language	English
Pages (from-to)	9237-9242
Number of pages	6
Journal	Applied Surface Science
Volume	257
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2011.04.060
State	Published - 01 09 2011
Externally published	Yes

Keywords

CdO
Chemical bath deposition
Group II-VI Semiconductors
Thin films

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10.1016/j.apsusc.2011.04.060

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@article{47ffa724ce0549beade37a1a8ca130d5,

title = "Investigation of chemical bath deposition of CdO thin films using three different complexing agents",

abstract = " Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2 O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2 , with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm -3 and a resistivity as low as 1.04 × 10 -2 Ω-cm are obtained.",

keywords = "CdO, Chemical bath deposition, Group II-VI Semiconductors, Thin films",

author = "Hani Khallaf and Chen, {Chia Ta} and Chang, {Liann Be} and Oleg Lupan and Aniruddha Dutta and Helge Heinrich and A. Shenouda and Lee Chow",

year = "2011",

month = sep,

day = "1",

doi = "10.1016/j.apsusc.2011.04.060",

language = "英语",

volume = "257",

pages = "9237--9242",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Investigation of chemical bath deposition of CdO thin films using three different complexing agents

AU - Khallaf, Hani

AU - Chen, Chia Ta

AU - Chang, Liann Be

AU - Lupan, Oleg

AU - Dutta, Aniruddha

AU - Heinrich, Helge

AU - Shenouda, A.

AU - Chow, Lee

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2 O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2 , with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm -3 and a resistivity as low as 1.04 × 10 -2 Ω-cm are obtained.

AB - Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2 O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2 , with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm -3 and a resistivity as low as 1.04 × 10 -2 Ω-cm are obtained.

KW - CdO

KW - Chemical bath deposition

KW - Group II-VI Semiconductors

KW - Thin films

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U2 - 10.1016/j.apsusc.2011.04.060

DO - 10.1016/j.apsusc.2011.04.060

M3 - 文章

AN - SCOPUS:80051549100

SN - 0169-4332

VL - 257

SP - 9237

EP - 9242

JO - Applied Surface Science

JF - Applied Surface Science

IS - 22

ER -

Investigation of chemical bath deposition of CdO thin films using three different complexing agents

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Keywords

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