Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Chia Chuan Wu; William Cheng Yu Ma; Yu Xuan Wang; Mao Chou Tai; Yu An Chen; Hong Yi Tu; Sheng Yao Chou; Ya Ting Chien; Ting Chang Chang

doi:10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Chia Chuan Wu
, William Cheng Yu Ma
, Yu Xuan Wang
, Mao Chou Tai
, Yu An Chen
, Hong Yi Tu
, Sheng Yao Chou
, Ya Ting Chien
, Ting Chang Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

Original language	English
Title of host publication	Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665491389
DOIs	https://doi.org/10.1109/IET-ICETA56553.2022.9971607
State	Published - 2022
Externally published	Yes
Event	2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 - Changhua, Taiwan Duration: 14 10 2022 → 16 10 2022

Publication series

Name	Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

Conference

Conference	2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
Country/Territory	Taiwan
City	Changhua
Period	14/10/22 → 16/10/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

LTPS
low-temperature fabrication
low-temperature polysilicon
low-temperature process
thin-film transistor

Access to Document

10.1109/IET-ICETA56553.2022.9971607

Cite this

Wu, C. C., Ma, W. C. Y., Wang, Y. X., Tai, M. C., Chen, Y. A., Tu, H. Y., Chou, S. Y., Chien, Y. T., & Chang, T. C. (2022). Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. In Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IET-ICETA56553.2022.9971607

Wu, Chia Chuan ; Ma, William Cheng Yu ; Wang, Yu Xuan et al. / Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022).

@inproceedings{616c8d5e7e9f467b9a44b6c74951e08f,

title = "Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process",

abstract = "In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.",

keywords = "LTPS, low-temperature fabrication, low-temperature polysilicon, low-temperature process, thin-film transistor",

author = "Wu, \{Chia Chuan\} and Ma, \{William Cheng Yu\} and Wang, \{Yu Xuan\} and Tai, \{Mao Chou\} and Chen, \{Yu An\} and Tu, \{Hong Yi\} and Chou, \{Sheng Yao\} and Chien, \{Ya Ting\} and Chang, \{Ting Chang\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 ; Conference date: 14-10-2022 Through 16-10-2022",

year = "2022",

doi = "10.1109/IET-ICETA56553.2022.9971607",

language = "英语",

series = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",

address = "美国",

}

Wu, CC, Ma, WCY, Wang, YX, Tai, MC, Chen, YA, Tu, HY, Chou, SY, Chien, YT & Chang, TC 2022, Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. in Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022, Changhua, Taiwan, 14/10/22. https://doi.org/10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. / Wu, Chia Chuan; Ma, William Cheng Yu; Wang, Yu Xuan et al.
Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

AU - Wu, Chia Chuan

AU - Ma, William Cheng Yu

AU - Wang, Yu Xuan

AU - Tai, Mao Chou

AU - Chen, Yu An

AU - Tu, Hong Yi

AU - Chou, Sheng Yao

AU - Chien, Ya Ting

AU - Chang, Ting Chang

PY - 2022

Y1 - 2022

N2 - In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

AB - In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

KW - LTPS

KW - low-temperature fabrication

KW - low-temperature polysilicon

KW - low-temperature process

KW - thin-film transistor

UR - https://www.scopus.com/pages/publications/85145354703

U2 - 10.1109/IET-ICETA56553.2022.9971607

DO - 10.1109/IET-ICETA56553.2022.9971607

M3 - 会议稿件

AN - SCOPUS:85145354703

T3 - Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

BT - Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

Y2 - 14 October 2022 through 16 October 2022

ER -

Wu CC, Ma WCY, Wang YX, Tai MC, Chen YA, Tu HY et al. Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. In Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022). doi: 10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Abstract

Publication series

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Bibliographical note

Keywords

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