Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Chia Chuan Wu; William Cheng Yu Ma; Yu Xuan Wang; Mao Chou Tai; Yu An Chen; Hong Yi Tu; Sheng Yao Chou; Ya Ting Chien; Ting Chang Chang

doi:10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Chia Chuan Wu, William Cheng Yu Ma, Yu Xuan Wang, Mao Chou Tai, Yu An Chen, Hong Yi Tu, Sheng Yao Chou, Ya Ting Chien, Ting Chang Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

Original language	English
Title of host publication	Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665491389
DOIs	https://doi.org/10.1109/IET-ICETA56553.2022.9971607
State	Published - 2022
Externally published	Yes
Event	2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 - Changhua, Taiwan Duration: 14 10 2022 → 16 10 2022

Publication series

Name	Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

Conference

Conference	2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022
Country/Territory	Taiwan
City	Changhua
Period	14/10/22 → 16/10/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

LTPS
low-temperature fabrication
low-temperature polysilicon
low-temperature process
thin-film transistor

Access to Document

10.1109/IET-ICETA56553.2022.9971607

Cite this

Wu, C. C., Ma, W. C. Y., Wang, Y. X., Tai, M. C., Chen, Y. A., Tu, H. Y., Chou, S. Y., Chien, Y. T., & Chang, T. C. (2022). Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. In Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IET-ICETA56553.2022.9971607

Wu, Chia Chuan ; Ma, William Cheng Yu ; Wang, Yu Xuan et al. / Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022).

@inproceedings{616c8d5e7e9f467b9a44b6c74951e08f,

title = "Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process",

abstract = "In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.",

keywords = "LTPS, low-temperature fabrication, low-temperature polysilicon, low-temperature process, thin-film transistor",

author = "Wu, \{Chia Chuan\} and Ma, \{William Cheng Yu\} and Wang, \{Yu Xuan\} and Tai, \{Mao Chou\} and Chen, \{Yu An\} and Tu, \{Hong Yi\} and Chou, \{Sheng Yao\} and Chien, \{Ya Ting\} and Chang, \{Ting Chang\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 ; Conference date: 14-10-2022 Through 16-10-2022",

year = "2022",

doi = "10.1109/IET-ICETA56553.2022.9971607",

language = "英语",

series = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",

address = "美国",

}

Wu, CC, Ma, WCY, Wang, YX, Tai, MC, Chen, YA, Tu, HY, Chou, SY, Chien, YT & Chang, TC 2022, Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. in Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022, Changhua, Taiwan, 14/10/22. https://doi.org/10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. / Wu, Chia Chuan; Ma, William Cheng Yu; Wang, Yu Xuan et al.
Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

AU - Wu, Chia Chuan

AU - Ma, William Cheng Yu

AU - Wang, Yu Xuan

AU - Tai, Mao Chou

AU - Chen, Yu An

AU - Tu, Hong Yi

AU - Chou, Sheng Yao

AU - Chien, Ya Ting

AU - Chang, Ting Chang

PY - 2022

Y1 - 2022

N2 - In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

AB - In this work, the electrical characteristics of the low-temperature polysilicon thin-film transistors (LTPS TFTs) fabricated at low-temperature process were investigated. To improve the process of AMOLED displays, a lower fabrication temperature is necessary to adopt and investigate since a lower fabrication temperature is suitable for flexible electronics. In general, the fabrication temperature of LTPS TFTs is about 400 ° C. Therefore, to clarify the impact of lower fabrication temperature, 400 ° C, 370 ° C, and 350 ° C are chosen as the maximum processing temperature during device fabrication for three TFT samples, respectively. It is found that the lower fabrication temperature device has lower on-current and higher on-resistance. However, a lower off-state leakage current is observed while the process temperature is declining due to trap-assisted thermal field emission. Silvaco TCAD simulation is discussed to support our findings.

KW - LTPS

KW - low-temperature fabrication

KW - low-temperature polysilicon

KW - low-temperature process

KW - thin-film transistor

UR - https://www.scopus.com/pages/publications/85145354703

U2 - 10.1109/IET-ICETA56553.2022.9971607

DO - 10.1109/IET-ICETA56553.2022.9971607

M3 - 会议稿件

AN - SCOPUS:85145354703

T3 - Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

BT - Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022

Y2 - 14 October 2022 through 16 October 2022

ER -

Wu CC, Ma WCY, Wang YX, Tai MC, Chen YA, Tu HY et al. Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process. In Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022). doi: 10.1109/IET-ICETA56553.2022.9971607

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

Abstract

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Keywords

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